NXP Semiconductors - BLF888,112

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BLF888,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF888,112
Description N-CHANNEL; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 200 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
Datasheet BLF888,112 Datasheet
In Stock163
NAME DESCRIPTION
Other Names: BLF888,112-ND
568-5102-5
934062101112
Maximum Power Dissipation (Abs): 500 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
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