NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9Y14-80E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

62 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

62 A

1

e3

30

260

PMV40UN2

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.044 ohm

3.7 A

DUAL

R-PDSO-G3

TO-236AB

35 pF

IEC-60134

BUK7Y15-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

53 A

PSMN1R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

179 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN9R5-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

211 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

89 A

1

e3

30

245

BLF647PS,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

BUK98150-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

22 mJ

5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.161 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

PSMN1R8-40YLC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1128 A

248 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.0021 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MO-235

IEC-60134

BLF647P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

BUK9Y59-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

16.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

16.7 A

1

e3

30

260

PSMN026-80YS,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

137 A

32 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0275 ohm

34 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

IEC-60134

PSMN4R0-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

95 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

95 A

BUK7Y41-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

25 A

BUK766R0-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

182 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK7Y9R9-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

89 A

BUK9Y25-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

34 A

1

e3

30

260

BLF871,112

NXP Semiconductors

N-CHANNEL

SINGLE

100 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BUK98150-55A/CU

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

22 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.161 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

AEC-Q101; IEC-60134

BUK9Y107-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

11.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

11.8 A

PSMN7R5-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

202 A

27.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0075 ohm

51 A

SINGLE

R-PSSO-G4

DRAIN

HIGH RELIABILITY

MO-235

IEC-60134

PSMN7R6-60BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

149 W

ENHANCEMENT MODE

1

92 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

92 A

1

e3

30

245

PMGD780SN/V,115

NXP Semiconductors

N-CHANNEL

YES

.41 W

ENHANCEMENT MODE

.49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.49 A

BUK7Y65-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

19 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

19 A

BUK9Y29-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

25 A

1

e3

30

260

PMV213SN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

1.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.25 ohm

1.9 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

22 pF

IEC-60134

PSMN5R0-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

270 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN2R6-40YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

131 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

651 A

179 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0028 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

PSMN3R3-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK9Y4R4-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN2R4-30MLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

BLF521,112

NXP Semiconductors

N-CHANNEL

SINGLE

10 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1 A

BUK9Y12-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

52 A

1

e3

30

260

PSMN013-30MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

38 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39 A

1

e3

30

260

PSMN1R0-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1450 A

259 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0014 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, ULTRA LOW RESISTANCE

MO-235

e3

30

260

IEC-60134

BF998R,235

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.03 A

e3

30

260

PSMN012-60YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

89 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

59 A

1

e3

30

260

PSMN4R6-60BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

211 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK7Y18-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

49 A

1

e3

30

260

PSMN011-60MSX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

58 A

BUK652R7-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK9K35-60E,115

NXP Semiconductors

N-CHANNEL

YES

38 W

ENHANCEMENT MODE

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

22 A

1

e3

30

260

BUK9Y15-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

95 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

53 A

1

e3

30

260

BUK9832-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

47 A

100 mJ

12 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.036 ohm

12 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

PSMN5R6-100PS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

539 A

468 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0056 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7635-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

139 A

49 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.035 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9Y41-80E,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

25 mJ

24 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.045 ohm

24 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

BUK9Y25-60E

NXP Semiconductors

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BUK553-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

70 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

80 ns

170 ns

.18 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

120 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.