PSMN1R8-40YLC by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PSMN1R8-40YLC
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet	PSMN1R8-40YLC Datasheet
In Stock	1,038

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	1128 A
Surface Mount:	YES
Terminal Finish:	PURE TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0021 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	248 mJ
JEDEC-95 Code:	MO-235
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Additional Features:	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Reference Standard:	IEC-60134

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,038	-	-

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