Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
N-CHANNEL |
ENHANCEMENT MODE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
45 W |
ENHANCEMENT MODE |
1 |
12 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
12 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
238 W |
ENHANCEMENT MODE |
1 |
85 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
85 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
1.1 W |
ENHANCEMENT MODE |
.18 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.18 A |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
121 A |
54 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0366 ohm |
30 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
IEC-60134 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
.375 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
7.5 ohm |
.375 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
45.4 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
PURE TIN |
.027 ohm |
37 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
MO-235 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1563 A |
342 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.00125 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
306 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
306 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
100 A |
1 |
e3 |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
ENHANCEMENT MODE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
238 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
593 A |
199 mJ |
100 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0048 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
MO-235 |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
194 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
349 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
100 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
74 A |
25 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.071 ohm |
18 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
IEC-60134 |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
38 W |
ENHANCEMENT MODE |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
30 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
56 W |
ENHANCEMENT MODE |
1 |
29 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
29 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
170 W |
ENHANCEMENT MODE |
1 |
90 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
90 A |
e3 |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
2.7 W |
ENHANCEMENT MODE |
1 |
.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.9 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
306 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
32 W |
ENHANCEMENT MODE |
27 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
27 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
56 W |
ENHANCEMENT MODE |
1 |
24 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
24 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
178 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
30 mJ |
17 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.07 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
ESD PROTECTED |
TO-220AB |
e3 |
|||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
117 W |
ENHANCEMENT MODE |
1 |
51 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
51 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
64 W |
ENHANCEMENT MODE |
1 |
25 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
25 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
113 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
129 A |
255 mJ |
43 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.059 ohm |
43 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
130 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.055 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
238 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
100 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
117 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
85 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
78 mJ |
34 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.03 ohm |
34 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MO-235 |
e3 |
30 |
260 |
||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
ENHANCEMENT MODE |
1 |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
45 W |
ENHANCEMENT MODE |
1 |
16 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
16 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
296 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
75 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
38 W |
ENHANCEMENT MODE |
20.7 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
20.7 A |
||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
130 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
326 A |
120 mJ |
82 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0085 ohm |
82 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
165 A |
125 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.039 ohm |
41 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
107 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.025 ohm |
27 A |
DUAL |
R-PDSO-G6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
68 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
PURE TIN |
.0275 ohm |
30 A |
SINGLE |
R-PSFM-T4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1441 A |
1588 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0013 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
HIGH RELIABILITY |
MO-235 |
IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
70 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
70 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
89 W |
ENHANCEMENT MODE |
1 |
90 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
90 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
5 W |
150 Cel |
SILICON |
80 ns |
140 ns |
TIN |
.4 ohm |
3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
22 mJ |
5 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.161 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
106 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
100 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
117 W |
ENHANCEMENT MODE |
1 |
67 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
67 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
ENHANCEMENT MODE |
1 |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
|||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
238 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
100 A |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.