NXP Semiconductors - PSMN028-100YS

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PSMN028-100YS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN028-100YS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 68 mJ; Package Style (Meter): FLANGE MOUNT;
Datasheet PSMN028-100YS Datasheet
In Stock1,506
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 137 A
Surface Mount: NO
Terminal Finish: PURE TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0275 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 68 mJ
JEDEC-95 Code: MO-235
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
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