PSMN028-100YS by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PSMN028-100YS
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 68 mJ; Package Style (Meter): FLANGE MOUNT;
Datasheet	PSMN028-100YS Datasheet
In Stock	1,506

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	137 A
Surface Mount:	NO
Terminal Finish:	PURE TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0275 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	68 mJ
JEDEC-95 Code:	MO-235
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,506	-	-

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