NXP Semiconductors - PSMN1R0-30YLDX

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PSMN1R0-30YLDX by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN1R0-30YLDX
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .0013 ohm; Package Style (Meter): SMALL OUTLINE;
Datasheet PSMN1R0-30YLDX Datasheet
In Stock4,769
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 1588 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: MO-235
Maximum Pulsed Drain Current (IDM): 1441 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH RELIABILITY
Reference Standard: IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0013 ohm
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