NXP Semiconductors - PSMN075-100MSE

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PSMN075-100MSE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN075-100MSE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 100 V; Transistor Application: SWITCHING;
Datasheet PSMN075-100MSE Datasheet
In Stock644
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 74 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .071 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 25 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Reference Standard: IEC-60134
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