NXP Semiconductors - PSMN040-100MSE

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PSMN040-100MSE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN040-100MSE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 30 A; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
Datasheet PSMN040-100MSE Datasheet
In Stock1,066
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 121 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0366 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 54 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
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