NXP Semiconductors - BLF871,112

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BLF871,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF871,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 100 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF871,112 Datasheet
In Stock78
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 100 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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