PSMN013-100YSE by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PSMN013-100YSE
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 125 mJ; Terminal Finish: PURE TIN;
Datasheet	PSMN013-100YSE Datasheet
In Stock	265

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	82 A
Maximum Pulsed Drain Current (IDM):	330 A
Surface Mount:	YES
Terminal Finish:	PURE TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.013 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	125 mJ
JEDEC-95 Code:	MO-235
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	IEC-60134

Pricing (USD)

Qty.	Unit Price	Ext. Price
265	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;