Onsemi Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDS4935A	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.023 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDMS86300DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	260 A	240 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0031 ohm	24 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA LOW RESISTANCE	MO-240AA	e3	30	260
NDT452AP	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel		MATTE TIN	.065 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDD4685-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	32 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	205 pF	AEC-Q101
BBS3002-DL-1E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.009 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	950 pF
FDD4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ	58 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0123 ohm	10.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDD8424H	Onsemi	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	55 A	29 mJ	9 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.024 ohm	20 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
FQT7N10LTF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	50 mJ	1.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.38 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDD4243	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	84 mJ	14 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.064 ohm	6.7 A	SINGLE	R-XSSO-G2	1		Not Qualified		TO-252	e3	30	260
IRF530A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	261 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.11 ohm	14 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NVF2955T1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	225 mJ	2.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.185 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN			TO-261AA	e3	30	260		AEC-Q101
RFD14N05LSM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.1 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
RFD16N05LSM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.056 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	MEGAFET	TO-252AA	e3	30	260
NDT456P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	7.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDS4675	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FQA36P15	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	294 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	1400 mJ	36 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.09 ohm	36 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING		e3
FQP47P06	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.026 ohm	47 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS5C604NLAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	776 mJ	287 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	287 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF	AEC-Q101
FDB035N10A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	333 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	704 A	558 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0035 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-263AB	e3	30	245
FDMS86252L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	73 mJ	12 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.056 ohm	4.4 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTD5867NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	18 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	36 W	150 Cel	SILICON	19.1 ns	-55 Cel	20.6 ns	MATTE TIN	.05 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
FDD4243-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		84 mJ	14 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	38 ns	-55 Cel	49 ns	MATTE TIN	.044 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	135 pF	AEC-Q101
NCV8406ASTT1G	Onsemi	N-CHANNEL	COMPLEX	YES	1.81 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		Matte Tin (Sn) - annealed	.24 ohm		DUAL	R-PDSO-G4	1	DRAIN				e3	30	260		AEC-Q101
FDT434P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FQT4N20LTF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.4 A	52 mJ	.85 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	.85 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
MCH3406-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		3 A			1					e6
FQB22P10TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	710 mJ	22 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.125 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDD6685	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDS8984-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.023 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDD8424H_F085	Onsemi																																				NOT SPECIFIED	NOT SPECIFIED
FDS6680A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		12.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1 W	150 Cel	SILICON	29 ns	-55 Cel	70 ns	MATTE TIN	.0095 ohm	12.5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	160 pF
FDB52N20TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	208 A	2520 mJ	52 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.049 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263	e3	30	245
FDD4243-G	Onsemi																									MATTE TIN					1					e3	30	260
NTBG020N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	468 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	392 A	264 mJ	98 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	106 ns	-55 Cel	94 ns	MATTE TIN	.028 ohm	98 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263CB	e3	30	245	24 pF
NTMFS5C670NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	61 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	440 A	166 mJ	71 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0088 ohm	71 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	15 pF
FDS2582	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		252 mJ	4.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.066 ohm	4.1 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDD86102LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	84 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0225 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDS9926A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS8984	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDD4141-F085P	Onsemi																									MATTE TIN					1					e3	30	260
NDT3055	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDT439N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	6.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FQD5P20TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.8 A	330 mJ	3.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	3.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQB47P06TM-AM002	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.026 ohm	47 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQP30N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	79 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	128 A	350 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.045 ohm	32 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FQP27P06_SW82127	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	560 mJ	27 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	425 ns	-55 Cel	260 ns	Matte Tin (Sn)	.07 ohm	27 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	155 pF
FDS8949-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	26 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.029 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260
FDB44N25TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	307 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	176 A	2055 mJ	44 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	930 ns	-55 Cel	420 ns	MATTE TIN	.069 ohm	44 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245	90 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.