Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FQB5N90TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	158 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	660 mJ	5.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.3 ohm	5.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NVTFS5116PLWFTAG	Onsemi	P-CHANNEL	SINGLE	YES	21 W							1			14 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn) - annealed		14 A			1					e3	30	260
FDS4465-G	Onsemi																									MATTE TIN					1					e3	30	260
FCB110N65F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	105 A	809 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		MATTE TIN	.11 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245
FDP12N50NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	46 A	560 mJ	11.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.52 ohm	11.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FQB22P10TM-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	710 mJ	22 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.125 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified				30	245
FDMC4435BZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	24 mJ	31 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.02 ohm	8.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e4	NOT SPECIFIED	NOT SPECIFIED
FDT458P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.13 ohm	3.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
ATP113-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	50 W							1			35 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		35 A			1					e6	30	260
NTTFS5C670NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	63 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	440 A	166 mJ	70 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0091 ohm	16 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260
NCV8406BDTRKG	Onsemi	N-CHANNEL	COMPLEX	YES	2.31 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.24 ohm		SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
FDC5661N-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FQD18N20V2TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	340 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.14 ohm	15 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTTFS5116PLTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	76 A	45 mJ	20 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.052 ohm	5.7 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260	84 pF
FDMC86102L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	63 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.023 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
FCH023N65S3L4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2025 mJ	75 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.023 ohm	75 A	SINGLE	R-PSFM-T4					TO-247	e3
FDS4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FCB20N60TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	690 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.19 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263	e3	30	245
FDMS86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	50 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.051 ohm	4.6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
RFD3055LE	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.107 ohm	11 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e3
NCV8406ADTRKG	Onsemi	N-CHANNEL	COMPLEX	YES	2.31 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.24 ohm		SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
NTH4L040N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	319 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	232 A	578 mJ	58 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	66 ns	-55 Cel	71 ns	Matte Tin (Sn) - annealed	.056 ohm	58 A	SINGLE	R-PSFM-T4					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	11 pF
FDS6910	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	56 ns	MATTE TIN	.013 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	100 pF
NTTFS5C673NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.013 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
FDMC8622	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	37 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.056 ohm	4 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	MO-240BA	e4	30	260
FDC608PZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.043 ohm	5.8 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDMQ86530L	Onsemi	N-CHANNEL	COMPLEX	YES	22 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	4	50 A		8 A	12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	45 ns	NICKEL PALLADIUM GOLD SILVER	.0175 ohm	8 A	DUAL	R-PDSO-N12	1	DRAIN SOURCE				e4	30	260	15 pF
FDD6637-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0116 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FQP50N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	121 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	990 mJ	52.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	820 ns	-55 Cel	470 ns	MATTE TIN	.025 ohm	52.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			120 pF
FDMC8360LET40	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	658 A	253 mJ	141 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	42 ns	-55 Cel	71 ns	Matte Tin (Sn) - annealed	.0021 ohm	141 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	80 pF
NVMFS5C604NLWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	776 mJ	287 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	287 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF	AEC-Q101
FDD5680	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	140 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.021 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDPF44N25T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	176 A	2055 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.069 ohm	44 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FCPF067N65S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	214 mJ	44 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.067 ohm	44 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTD2955G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.18 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDMS86350	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	864 mJ	80 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0024 ohm	25 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
EFC8811R-TF	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.5 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	R-PBCC-N6		SOURCE
FDP51N25	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	204 A	1111 mJ	51 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.06 ohm	51 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDS5680	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	40 ns	-55 Cel	76 ns	Matte Tin (Sn) - annealed	.02 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	NOT SPECIFIED	100 pF
NTMFS4C06NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	68 mJ	69 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.004 ohm	11 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	40 pF
FDMS86500DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	317 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0023 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
FDS9958-F085	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	54 mJ	2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.105 ohm	2.9 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260		AEC-Q101
ATP302-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	197 mJ	70 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.018 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
FQT1N80TF-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.8 A	90 mJ	.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	100 ns	Matte Tin (Sn) - annealed	20 ohm	.2 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260	5 pF
FCB36N60NTM	Onsemi	N-CHANNEL	SINGLE	YES	312 W			600 V			ENHANCEMENT MODE	1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed	.09 ohm	36 A			1					e3	30	245
FQD13N06LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	90 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.145 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NVMFS5A140PLZWFT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	560 A	420 mJ	140 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN	7.2 ohm	140 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDD8880	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		53 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.