Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FQB7P20TM

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

29.2 A

570 mJ

7.3 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.69 ohm

7.3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FQP65N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

650 mJ

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

65 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NDD60N900U1-35G

Onsemi

3

NVTFS5124PLTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

18 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

8.5 mJ

6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

6 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

FCD850N80Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

114 mJ

6 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

72 ns

-55 Cel

109 ns

MATTE TIN

.85 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

FDMS8050ET30

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1914 A

1536 mJ

423 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

83 ns

-55 Cel

167 ns

Matte Tin (Sn) - annealed

.00065 ohm

423 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

310 pF

MCH6342-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

UNSPECIFIED

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

18 A

4.5 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.073 ohm

4.5 A

DUAL

R-XDSO-F6

1

ESD PROTECTED

e6

30

260

MTB50P03HDLT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1250 mJ

50 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

NTMFS6B05NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

370 A

125 mJ

104 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

16 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

FDP3652

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

182 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FQPF13N50CF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

530 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.54 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTBS2D7N06M7

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

176 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

193 mJ

110 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

115 ns

-55 Cel

64 ns

MATTE TIN

.0027 ohm

110 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

245

NVMFS6H801NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

166 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

960 mJ

157 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0028 ohm

157 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

22 pF

AEC-Q101

SSH70N10A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

1633 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

70 A

SINGLE

R-PSFM-T3

Not Qualified

e3

ECH8661-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

30

260

FDA24N40F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

1190 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.19 ohm

23 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FDMC8360L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

54 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

240 A

294 mJ

80 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0021 ohm

27 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

FQA9N90C-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

900 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

NTMFS5H600NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

250 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

250 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NVMFS5C404NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

907 mJ

378 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0007 ohm

378 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

120 pF

AEC-Q101

NVMFS6H800NWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1271 mJ

203 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0021 ohm

203 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

27 pF

AEC-Q101

RFP50N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

131 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.022 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDA24N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1872 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

24 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FDB3652-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

182 mJ

61 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDMC4435BZ-F127-L701

Onsemi

FDMC86102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

72 mJ

29 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM

.024 ohm

7 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

MO-240BA

e4

30

260

NTMFD5C446NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

644 A

171 mJ

145 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0039 ohm

25 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

48 pF

FDMC4435BZ-F127

Onsemi

Nickel/Palladium/Gold (Ni/Pd/Au)

1

e4

30

260

FDMC8462

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

216 mJ

64 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium (Ni/Pd)

.0058 ohm

14 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDP150N10A_F102

Onsemi

N-CHANNEL

SINGLE

NO

91 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

NTD2955T4

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NVMFD5C462NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

311 A

174 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0077 ohm

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

AEC-Q101

NVTFS5C673NLWFTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

290 A

88 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.015 ohm

13 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FCH072N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

481 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

156 A

1128 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.072 ohm

52 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDU6N25

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

12 mJ

4.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.1 ohm

4.4 A

SINGLE

R-PSIP-T3

TO-251AA

e3

FQD7N10LTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23.2 A

50 mJ

5.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

5.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FQT4N25TF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

52 mJ

.83 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.75 ohm

.83 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

NTMFS6B03NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

165 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

470 A

180 mJ

132 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0048 ohm

19 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

FCPF190N60E-F152

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

20.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

94 ns

-55 Cel

252 ns

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

165 pF

FDB8030L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

187 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1500 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0035 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

30

245

FDH45N50F-F133

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

1868 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.12 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

NOT SPECIFIED

NOT SPECIFIED

FDMD8240LET40

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

489 A

216 mJ

103 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

38 ns

-55 Cel

76 ns

Matte Tin (Sn) - annealed

.0026 ohm

103 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

52 pF

NTD2955PT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

NVTFS5C453NLWFTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

740 A

215 mJ

107 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0052 ohm

107 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

AEC-Q101

FCH067N65S3-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1160 mJ

44 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.067 ohm

44 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDD8447L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

AEC-Q101

FDD86250

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

132 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

180 mJ

51 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.022 ohm

8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDD86540

Onsemi

N-CHANNEL

SINGLE

YES

127 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

228 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0041 ohm

21.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.