NTMFD5C446NLT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFD5C446NLT1G
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Avalanche Energy Rating (EAS): 171 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	NTMFD5C446NLT1G Datasheet
In Stock	1,130

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	644 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	8
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0039 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	171 mJ
Maximum Feedback Capacitance (Crss):	48 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	145 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,130	$2.230	$2,519.900

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