Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDD9507L-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	227 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		259 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	21 ns	-55 Cel	710 ns	MATTE TIN	.0072 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
FQU2N100TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	160 mJ	1.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	9 ohm	1.6 A	SINGLE	R-PSIP-T3			Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS3D6N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	888 A	739 mJ	132 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0058 ohm	132 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	29 pF	AEC-Q101
NVTFS4C06NTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDMS86103L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	312 mJ	81 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.008 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FQB50N06LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	990 mJ	52.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.025 ohm	52.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDMC6679AZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	32 A		51 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.01 ohm	11.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
FQD4P25TM-WS	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	280 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.1 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
NTD2955-1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.18 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NVMFD5C668NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57.5 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	454 A	205 mJ	15.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0092 ohm	15.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	14 pF	AEC-Q101
NVTFS4C06NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
ECH8693R-TL-W	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	24 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	60 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Bismuth (Sn/Bi)	.0091 ohm	14 A	DUAL	R-PDSO-F8	1					e6	30	260
NVMFS5C646NLAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	750 A	185 mJ	93 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	6.3 ohm	93 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDB070AN06A0_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	175 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		190 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.007 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
FDD5N60NZTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	216 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDD770N15A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56.8 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	31.7 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.077 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDPF5N50NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	160 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	4.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FQP4N90C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	570 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4.2 ohm	4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NVMFD5C680NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	57 A	47 mJ	26 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.041 ohm	7.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
FDS6670A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1 W	150 Cel	SILICON	43 ns	-55 Cel	88 ns	MATTE TIN	.008 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	200 pF
FDS6975	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.032 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
FQP6N80C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	158 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	680 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.5 ohm	5.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS5C404NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	200 W							1			352 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		352 A			1					e3	30	260
FDD86102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	121 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.024 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDP8030L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	187 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	1500 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0035 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
FQP17P10	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	580 mJ	16.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.19 ohm	16.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FQP85N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	810 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.01 ohm	85 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NDT451AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		7.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.035 ohm	7.2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
FDA20N50-F109	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A	1110 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.23 ohm	22 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING
FDMS86250	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	180 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	6.7 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTBLS1D1N08H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	311 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1580 mJ	351 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.00105 ohm	351 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260	49 pF
NTD6414ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	117 A	154 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.037 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDB075N15A-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	333 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		502 mJ	110 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0075 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
FDMA8051L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A		10 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	23 ns	-55 Cel	41 ns	Nickel/Palladium/Gold (Ni/Pd/Au)	.014 ohm	10 A	DUAL	S-PDSO-N6	1	DRAIN				e4	NOT SPECIFIED	NOT SPECIFIED	25 pF
FDMS86182	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	364 A	216 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	43 ns	Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	25 pF
HUF76407D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.117 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
NVMFS5A160PLZT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	335 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0105 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FCD1300N80Z	Onsemi	N-CHANNEL	SINGLE	YES	52 W							1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		4 A			1					e3	30	245
FDD8896	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		168 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.068 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
FDS6690A-NBNP006	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0125 ohm	11 A	DUAL	R-PDSO-G8	1					e3	30	260	115 pF
NVMFS5113PLWFT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	415 A	315 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.014 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NVMFS5C404NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	200 W							1			352 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		352 A			1					e3	30	260
FDMS8622	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	30 A	12 mJ	16.5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.056 ohm	4.8 A	DUAL	R-PDSO-N5	1	DRAIN		ULTRA-LOW RESISTANCE	MO-240AA	e3	30	260
NTBLS4D0N15MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	316 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2255 A	332 mJ	187 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0044 ohm	19 A	DUAL	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260
NTD25P03LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NVTFS5C673NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	290 A	88 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.015 ohm	13 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDD5612	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	90 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.055 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDN8601	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	13 mJ	2.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	26 ns	MATTE TIN	.109 ohm	2.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.