Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FQB11P06TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45.6 A	160 mJ	11.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.175 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQB33N10LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	127 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	132 A	430 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.055 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQB33N10TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	127 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	132 A	435 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.052 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQP20N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	53 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	170 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.07 ohm	21 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
HUF76423P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.035 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
MTP23P06V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	81 A	794 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.12 ohm	23 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
NTD18N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	55 W	175 Cel	SILICON	180 ns	-55 Cel	120 ns	MATTE TIN	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	80 pF
FCD380N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	106 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30.6 A	211.6 mJ	10.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.38 ohm	10.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FCH099N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	111 A	809 mJ	97 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	114 ns	-55 Cel	248 ns	MATTE TIN	.099 ohm	37 A	SINGLE	R-PSFM-T3					TO-247	e3			20 pF
FDB12N50TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	165 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	456 mJ	11.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.65 ohm	11.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
FDC637AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	62 ns	MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	145 pF
FDD6N50TM_WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR		1	24 A	270 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA		30	260
FDMC510P-F106	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	82 ns	-55 Cel	812 ns	NICKEL PALLADIUM GOLD	.008 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260	1110 pF
FDMC8321L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	86 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0025 ohm	22 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDMC86570LET60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	436 A	253 mJ	87 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	46 ns	-55 Cel	71 ns	Matte Tin (Sn) - annealed	.0043 ohm	87 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FQD4P40TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	260 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.1 ohm	2.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQPF20N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62.8 A	170 mJ	15.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.07 ohm	15.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
NTBG040N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	578 mJ	60 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	66 ns	-55 Cel	66 ns	Matte Tin (Sn) - annealed	.056 ohm	60 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263CB	e3	30	245	12.5 pF
NTF5P03T3G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.56 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	250 mJ	3.7 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-261AA	e3	30	260
FDMA530PZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY		30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	24 A		6.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.065 ohm	6.8 A	DUAL	S-PDSO-N6	1		Not Qualified			e4	30	260
FDMS0312S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	60 mJ	83 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0044 ohm	19 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDMS86300	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	252 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0039 ohm	19 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260
FQD7P06TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	90 mJ	5.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.451 ohm	5.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQPF13N50C-F105	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	860 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN			SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
NTB082N65S3F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	313 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	510 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.082 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245
NTMTSC1D6N10MCTXG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	291 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1550 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	267 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	80 pF
NVMFS5C670NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	440 A	166 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0088 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NXH040F120MNF1PTG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	74 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	4	90 A			22	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-40 Cel			.056 ohm	30 A	UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	12 pF
FDB045AN08A0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		600 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0045 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDBL0150N80	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	Matte Tin (Sn) - annealed	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260
FDD86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	72 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.052 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	30	260
NTD20N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	MATTE TIN	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260	120 pF
NTD3055L170T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTHL040N65S3F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	446 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	162.5 A	1009 mJ	65 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.04 ohm	65 A	SINGLE	R-PSFM-T3					TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
NTMD5838NLR2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A	20 mJ	8.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0308 ohm	7.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
NTMFS5C404NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			339 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		339 A			1					e3	30	260
NTP2955G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.196 ohm	2.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NVMFS5H663NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	63 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	359 A	274 mJ	67 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.01 ohm	67 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	7.5 pF	AEC-Q101
ECH8690-TL-H	Onsemi	N-CHANNEL AND P-CHANNEL		YES	1.8 W						ENHANCEMENT MODE				4.7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		4.7 A			1					e6	30	260
FCPF190N60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60.6 A	400 mJ	20.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.199 ohm	20.2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDB3682	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		55 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.036 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
MTP2P50EG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	80 mJ	2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-220AB	e3		260
NTB35N15T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	111 A	700 mJ	37 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	37 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NVMFD5C470NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	110 A	49 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0178 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5C674NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	119 A	61 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.0204 ohm		DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFS5C426NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	128 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1480 A	453 mJ	237 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0018 ohm	237 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	70 pF	AEC-Q101
FDS8449-G	Onsemi																									MATTE TIN					1					e3	30	260
NVMFS5C404NAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	907 mJ	378 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0007 ohm	378 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	120 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.