FCH099N60E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FCH099N60E
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Terminal Form: THROUGH-HOLE; Maximum Feedback Capacitance (Crss): 20 pF;
Datasheet	FCH099N60E Datasheet
In Stock	14,160

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	114 ns
Maximum Drain Current (ID):	37 A
Maximum Pulsed Drain Current (IDM):	111 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	357 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	248 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.099 ohm
Avalanche Energy Rating (EAS):	809 mJ
Maximum Feedback Capacitance (Crss):	20 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	600 V
Maximum Drain Current (Abs) (ID):	97 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
14,160	-	-

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