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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | ECH8690-TL-H |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; |
| Datasheet | ECH8690-TL-H Datasheet |
| In Stock | 8,626 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
ECH8690-TL-HOSTR ECH8690-TL-HOSDKR 2832-ECH8690-TL-HTR ECH8690-TL-H-ND ECH8690-TL-HOSCT |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 4.7 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Bismuth (Sn/Bi) |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | 1.8 W |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 4.7 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









