Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NDT014L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

2.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

NTMFS4937NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43 W

UNSPECIFIED

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

210 A

68.5 mJ

17.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.007 ohm

10.2 A

DUAL

R-XDSO-F5

1

DRAIN

Not Qualified

e3

30

260

FDB0190N807L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1440 A

777 mJ

270 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

221 ns

-55 Cel

237 ns

Matte Tin (Sn) - annealed

.0017 ohm

270 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

330 pF

NTH4L080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

171 mJ

29 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

28 ns

-55 Cel

54 ns

Matte Tin (Sn) - annealed

.11 ohm

29 A

SINGLE

R-PSFM-T4

HIGH RELIABILITY

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

10 pF

NVMFS5C426NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

128 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1480 A

453 mJ

237 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0018 ohm

237 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

70 pF

AEC-Q101

FCP165N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

525 mJ

23 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

101 ns

-55 Cel

257 ns

Matte Tin (Sn) - annealed

.165 ohm

23 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCPF190N60E

Onsemi

N-CHANNEL

SINGLE

NO

39 W

1

20.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

20.6 A

e3

NOT SPECIFIED

NOT SPECIFIED

FDD3680

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

245 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.046 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDMA1028NZ

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6 A

3.7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

32 ns

-55 Cel

32 ns

Nickel/Palladium/Gold (Ni/Pd/Au)

.068 ohm

3.7 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

MO-229VCCC

e4

NOT SPECIFIED

NOT SPECIFIED

60 pF

NTD3055L104G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Tin (Sn)

.104 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

40

260

FDP047N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

656 A

1153 mJ

164 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0047 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-220AB

e3

FDS8978

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

49 A

57 mJ

7.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.018 ohm

6.9 A

DUAL

R-PDSO-G8

1

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

260

NVMFS5C404NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

907 mJ

370 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.001 ohm

370 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

79.8 pF

AEC-Q101

FDT86106LZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

12 mJ

3.2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ns

-55 Cel

30 ns

Matte Tin (Sn) - annealed

.108 ohm

3.2 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

e3

30

260

5 pF

NVTFS4C06NWFTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

367 A

34 mJ

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0061 ohm

71 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVTFS4C06NWFTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

367 A

34 mJ

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0061 ohm

71 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

BUZ11-NR4941

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.04 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDD6N25TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

45 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.1 ohm

4.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

FAST SWITCHING

TO-252AA

e3

30

260

MTD3055VLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

72 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

NTTFS5820NLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

149 A

48 mJ

37 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0115 ohm

11 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NVBG025N065SC1

Onsemi

NVH4L020N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

408 A

264 mJ

102 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

69 ns

-55 Cel

86 ns

Matte Tin (Sn) - annealed

.028 ohm

102 A

SINGLE

R-PSFM-T4

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

24 pF

AEC-Q101

FDWS9508L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

211 mJ

80 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

23 ns

-55 Cel

780 ns

MATTE TIN

.0085 ohm

80 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240

e3

30

260

AEC-Q101

FDB0105N407L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2540 A

1109 mJ

460 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

183 ns

-55 Cel

283 ns

Matte Tin (Sn) - annealed

.0008 ohm

460 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

1365 pF

FDMC010N08C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

206 A

96 mJ

51 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

29 ns

-55 Cel

41 ns

Matte Tin (Sn) - annealed

.01 ohm

51 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

30 pF

FDMC8296

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

72 mJ

44 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.008 ohm

12 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e4

30

260

FDN5632N-F085

Onsemi

N-CHANNEL

SINGLE

YES

1.1 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

1.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FDP20N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1110 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

FDS9934C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

6.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTD6415ANLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

79 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.056 ohm

23 A

DUAL

R-PDSO-G2

1

DRAIN

Not Qualified

e3

30

260

70 pF

NTHD3100CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

12 A

3.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.08 ohm

2.9 A

DUAL

R-XDSO-C8

1

Not Qualified

e3

30

260

NVTFS6H850NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

300 A

271 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0095 ohm

11 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FDD8444

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

227 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

535 mJ

17.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

5.2 ohm

155 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FQPF4N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

47 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

570 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.2 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NDD60N900U1T4G

Onsemi

N-CHANNEL

SINGLE

YES

74 W

1

5.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.9 A

1

e3

30

260

NTHL020N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

503 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

472 A

264 mJ

118 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

.028 ohm

118 A

SINGLE

R-PSFM-T3

TO-247

e3

24 pF

FDMC8327L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

25 mJ

14 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0097 ohm

12 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e4

30

260

HUF75645P3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.014 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

MTP2P50E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

80 mJ

2 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

6 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

HIGH VOLTAGE

TO-220AB

e0

30

235

NTD20P06LG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

54 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

304 mJ

15 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.15 ohm

15.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

FDB38N30U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

313 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

152 A

722 mJ

38 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.12 ohm

38 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

FQD2P40TM

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.24 A

120 mJ

1.56 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

6.5 ohm

1.56 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

NTD6416ANLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

50 mJ

19 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.074 ohm

19 A

DUAL

R-PDSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTF2955T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.92 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.4 A

225 mJ

2.4 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.185 ohm

1.7 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

TO-261AA

e0

235

NVMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

SMP3003-TL-1E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

468 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.011 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

FDD390N15A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

104 A

78 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.04 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

FDMS86255

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

541 mJ

45 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0124 ohm

10 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.