Onsemi - NTHL020N090SC1

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NTHL020N090SC1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTHL020N090SC1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 503 W; Maximum Drain Current (Abs) (ID): 118 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NTHL020N090SC1 Datasheet
In Stock293
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 118 A
Maximum Pulsed Drain Current (IDM): 472 A
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): 503 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .028 ohm
Avalanche Energy Rating (EAS): 264 mJ
Other Names: 2832-NTHL020N090SC1
2156-NTHL020N090SC1
488-NTHL020N090SC1
Maximum Feedback Capacitance (Crss): 24 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 900 V
Maximum Drain Current (Abs) (ID): 118 A
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