Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDMS8320L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	264 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0011 ohm	36 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
FDP085N10A_F102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	384 A	269 mJ	96 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0085 ohm	96 A	SINGLE	R-PSFM-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
FDP085N10A-F102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	384 A	269 mJ	96 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	100 ns	-55 Cel	94 ns	MATTE TIN	.0085 ohm	96 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDP55N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	114 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	480 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.022 ohm	55 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
FQAF13N80	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	1100 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.75 ohm	8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
NTD20N03L27T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	288 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.031 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
NTD20P06LT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTHL060N090SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	221 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	184 A	162 mJ	46 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	106 ns	-55 Cel	94 ns	Matte Tin (Sn) - annealed	.084 ohm	46 A	SINGLE	R-PSFM-T3		DRAIN			TO-247	e3			11 pF
NVMFD5C446NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	637 A	223 mJ	127 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0029 ohm	24 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFS5832NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	127 W							1			120 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn) - annealed		120 A			1					e3	30	260
NVMFS5832NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	127 W							1			120 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn) - annealed		120 A			1					e3	30	260
FDB8447L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	153 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDBL86063-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		160 mJ	240 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	53 ns	-55 Cel	51 ns	Matte Tin (Sn) - annealed	.0026 ohm	240 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260		AEC-Q101
FDBL86561-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		1167 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260		AEC-Q101
FDD8445-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		144 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	79 W	175 Cel	SILICON	138 ns	-55 Cel	53 ns	MATTE TIN	.0087 ohm		SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	270 pF	AEC-Q101
FDD8445-F085P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		144 mJ	50 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	79 W	175 Cel	SILICON	138 ns	-55 Cel	53 ns	MATTE TIN	.0087 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	270 pF	AEC-Q101
FDMT800100DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	989 A	1536 mJ	162 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	80 ns	-55 Cel	84 ns	Matte Tin (Sn) - annealed	.00295 ohm	162 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	75 pF
FDMT80080DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	1453 A	1734 mJ	254 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	212 ns	-55 Cel	168 ns	Matte Tin (Sn) - annealed	.00135 ohm	254 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	125 pF
FQA28N50	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	113.6 A	1300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.16 ohm	28.4 A	SINGLE	R-PSFM-T3			Not Qualified			e3
FQA28N50F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	113.6 A	1300 mJ	28.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.16 ohm	28.4 A	SINGLE	R-PSFM-T3			Not Qualified			e3
FQB19N20CTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	433 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.17 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
FQD10N20CTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31.2 A	210 mJ	7.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.36 ohm	7.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING	TO-252AA	e3	30	260
FQD9N25TM-F080	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	29.6 A	165 mJ	7.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.42 ohm	7.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AB	e3	30	260
FQP27N25	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	102 A	600 mJ	25.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.11 ohm	25.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FQPF47P06YDTU	Onsemi	P-CHANNEL	SINGLE	NO	62 W							1			30 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		30 A								e3
HUF75639S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			56 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.025 ohm	56 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NTB150N65S3HF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	192 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	275 mJ	24 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.15 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245
NTDV20N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	TIN	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN				e3			120 pF	AEC-Q101
NTP5D0N15MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	214 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	818 A	1014 mJ	139 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.005 ohm	139 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				13 pF
NVB190N65S3F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	162 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	220 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.19 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
NVMFS5C426NWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	128 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	739 mJ	235 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0013 ohm	235 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	59 pF	AEC-Q101
NVMFS5C682NLWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	130 A	43 mJ	25 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0315 ohm	25 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NVMFS6H848NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	319 A	267 mJ	59 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.011 ohm	59 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	11 pF	AEC-Q101
SSR1N60BTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	50 mJ	.9 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	140 ns	-55 Cel	140 ns	MATTE TIN	12 ohm	.9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	4.7 pF
FCMT299N60	Onsemi	N-CHANNEL	SINGLE	YES	125 W							1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A			1						30	260
FCPF11N60T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	340 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.38 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDB1D7N10CL7	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1390 A	595 mJ	168 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	116 ns	-55 Cel	194 ns	Matte Tin (Sn) - annealed	.00175 ohm	268 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263CB	e3	30	245	80 pF
FDD3706	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ	14.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.009 ohm	14.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDD7N20TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	62.5 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.69 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
FDMC007N08LCDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	339 A	150 mJ	64 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	31 ns	-55 Cel	68 ns	Matte Tin (Sn) - annealed	.0068 ohm	64 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	40 pF
FDP10N60NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	185 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	550 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.75 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FDS6982S	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		8.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	6.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
FQB10N50CFTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	143 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	825 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.61 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245
FQD20N06TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	67.2 A	155 mJ	16.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.063 ohm	16.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQI5N60CTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	210 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	4.5 A	SINGLE	R-PSIP-T3			Not Qualified	FAST SWITCHING	TO-262AA	e3
NTD5865NL-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	137 A	36 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.019 ohm	40 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
NTF3055L108T1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	74 mJ	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.12 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e0		235
NTMFS015N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	423 A	54 mJ	54 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0122 ohm	54 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.