Onsemi - NTDV20N06T4G

NTDV20N06T4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTDV20N06T4G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Avalanche Energy Rating (EAS): 170 mJ; Transistor Application: SWITCHING;
Datasheet NTDV20N06T4G Datasheet
In Stock2,196
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 140 ns
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 60 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 140 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 60 W
Maximum Drain-Source On Resistance: .046 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 170 mJ
Maximum Feedback Capacitance (Crss): 120 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 20 A
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