Onsemi - FQA28N50

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FQA28N50 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQA28N50
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
Datasheet FQA28N50 Datasheet
In Stock2,457
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 1300 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 28.4 A
Maximum Pulsed Drain Current (IDM): 113.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .16 ohm
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