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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FDBL86561-F085 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MO-299A; No. of Elements: 1; Peak Reflow Temperature (C): 260; |
| Datasheet | FDBL86561-F085 Datasheet |
| In Stock | 9,416 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 300 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0022 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 1167 mJ |
| Other Names: |
FDBL86561_F085TR FDBL86561_F085TR-ND FDBL86561_F085CT FDBL86561_F085DKR-ND FDBL86561_F085DKR FDBL86561-F085TR FDBL86561-F085CT FDBL86561-F085DKR FDBL86561_F085CT-ND |
| JEDEC-95 Code: | MO-299A |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |









