Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDD8870

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

690 mJ

160 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0044 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDMC7692

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

58 mJ

16 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0085 ohm

13.3 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMC7692S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

45 A

21 mJ

18 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0093 ohm

12.5 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e4

NOT SPECIFIED

NOT SPECIFIED

FDS6912

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.028 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDWS9509L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

84 mJ

65 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

22 ns

-55 Cel

405 ns

Matte Tin (Sn) - annealed

.0153 ohm

65 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

AEC-Q101

FDWS9520L-F085

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

281 A

90 mJ

60.8 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0125 ohm

60.8 A

DUAL

R-PDSO-F6

1

DRAIN

MO-240AA

30

260

AEC-Q101

FQPF65N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

645 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

40 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

FQPF7N65CYDTU

Onsemi

N-CHANNEL

SINGLE

NO

52 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

e3

FQPF85N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

62 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

212 A

820 mJ

53 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.01 ohm

53 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

HUF75345G3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

HUFA76429D3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.029 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e3

NTBL048N60S5H

Onsemi

NTD40N03R-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41.7 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

32 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.023 ohm

32 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e3

260

NTHD3102CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

16 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

4 A

DUAL

R-XDSO-C8

1

Not Qualified

e3

30

260

NVBG020N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

477 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

448 A

264 mJ

112 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.028 ohm

112 A

SINGLE

R-PSSO-G7

1

DRAIN

TO-263CB

e3

30

245

25 pF

AEC-Q101

NVD5C632NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

363 mJ

155 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0034 ohm

155 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

36 pF

AEC-Q101

NVMFD5C462NT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

298 A

146 mJ

70 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0054 ohm

17.6 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5C466NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

198 A

72 mJ

52 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0126 ohm

15 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

13 pF

AEC-Q101

NVTFS5C478NLWFTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

104 A

43 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.025 ohm

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

CPH6355-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.169 ohm

3 A

DUAL

R-PDSO-G6

1

e6

30

260

ECH8697R-TL-W

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

30

260

FDB7030BL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

73 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

30

245

FDB8832

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1246 mJ

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0022 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDD2572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.054 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDMC7696

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

21 mJ

20 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0115 ohm

12 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

30

260

FDN028N20

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

6 mJ

6.1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ns

-55 Cel

39 ns

MATTE TIN

.028 ohm

6.1 A

DUAL

R-PDSO-G3

1

e3

30

260

130 pF

FDP3682

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

95 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.036 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQA90N08

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1360 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

90 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FQB12P20

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

810 mJ

11.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

450 ns

-55 Cel

220 ns

.47 ohm

11.5 A

SINGLE

R-PSSO-G2

DRAIN

NOT SPECIFIED

NOT SPECIFIED

40 pF

FQP45N15V2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

1124 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.04 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

MPS2907AG

Onsemi

Other Transistors

TIN SILVER COPPER

Not Qualified

e1

10

260

NTB5605T4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

338 mJ

18.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.14 ohm

18.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e3

260

NTB60N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTB60N06LG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

NTB60N06LT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

30

235

NTD3055L104-001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.104 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

e0

235

NVHL110N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NVMFS4C03NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

549 mJ

143 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0024 ohm

143 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6H852NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

54 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

184 mJ

40 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0142 ohm

40 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

5.4 pF

AEC-Q101

NVTFS6H850NLWFTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

73 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

308 A

208 mJ

14.8 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.011 ohm

14.8 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

10 pF

AEC-Q101

NVVR26A120M1WSS

Onsemi

2SK3745LS-1E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

41 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

13 ohm

SINGLE

R-PSFM-T3

ISOLATED

HIGH RELIABILITY

TO-220AB

e3

CPH6355-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

ECH8660-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

30

260

FCMT099N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

227 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

75 A

145 mJ

30 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.099 ohm

30 A

SINGLE

S-PSSO-N4

1

30

260

FCMT199N60

Onsemi

N-CHANNEL

SINGLE

YES

208 W

1

20.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20.2 A

1

30

260

FCP190N65F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

20.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDA20N50F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

388 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.26 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.