NTD3055L104-001 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTD3055L104-001
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Peak Reflow Temperature (C): 235; Maximum Drain-Source On Resistance: .104 ohm;
Datasheet	NTD3055L104-001 Datasheet
In Stock	1,597

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	61 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	45 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	235
Maximum Drain-Source On Resistance:	.104 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,597	-	-

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