Onsemi - FDWS9520L-F085

FDWS9520L-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDWS9520L-F085
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 175 Cel;
Datasheet FDWS9520L-F085 Datasheet
In Stock407
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 60.8 A
Maximum Pulsed Drain Current (IDM): 281 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 75 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0125 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 90 mJ
JEDEC-95 Code: MO-240AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 60.8 A
Peak Reflow Temperature (C): 260
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