Onsemi Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDP2710-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

483 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.047 ohm

4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

FDPF12N50UT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

456 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FDS6898AZ

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

38 A

9.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

9.4 A

DUAL

R-PDSO-G8

1

Not Qualified

ESD PROTECTED

e3

30

260

FDT86256

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

1 mJ

3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.845 ohm

1.2 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

FDZ1323NZ

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

BALL

RECTANGULAR

ENHANCEMENT MODE

2

6

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B6

1

e1

30

260

380 pF

FQAF11N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

960 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.1 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

FQB8N60CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

230 mJ

7.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

7.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

FQD12N20TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

210 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.28 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FQD4N20TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

52 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FQD5N60CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

49 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

210 mJ

2.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 ohm

2.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

FQP13N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51.2 A

95 mJ

12.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.18 ohm

12.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP13N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

810 mJ

12.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.43 ohm

12.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP3P20

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

52 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

150 mJ

2.8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.7 ohm

2.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

HUFA76419D3S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

62 ns

-55 Cel

150 ns

.043 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

AEC-Q101

NTB110N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

240 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

30 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

245

NTB5605PG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

73.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

338 mJ

17 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.14 ohm

18.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

NTBG015N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

867 W

PLASTIC/EPOXY

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

873 A

176 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

176 A

SINGLE

R-PSSO-G7

1

DRAIN

TO-263CB

e3

30

245

39.42 pF

NTBG028N170M1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

428 W

PLASTIC/EPOXY

SWITCHING

1700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

195 A

450 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.04 ohm

71 A

SINGLE

R-PSSO-G7

DRAIN

TO-263CB

15 pF

NTD4N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

80 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.4 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

HIGH VOLTAGE

e0

NTF3055-160T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

65 mJ

2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.16 ohm

2 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261

e0

235

NTH4L040N120M3S

Onsemi

NTHD4502NT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.13 W

UNSPECIFIED

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

12 A

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

22 ns

-55 Cel

30 ns

MATTE TIN

.085 ohm

2.2 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

30

260

25 pF

NTHD4508NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.13 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

40 ns

-55 Cel

26 ns

MATTE TIN

.075 ohm

3 A

DUAL

R-PDSO-F8

1

Not Qualified

e3

30

260

25 pF

NTHL040N120M3S

Onsemi

NTHL110N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4934NT1G

Onsemi

147 A

FET General Purpose Power

MATTE TIN

1

Not Qualified

e3

30

260

NTMFS6B03NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

165 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

470 A

180 mJ

132 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0048 ohm

19 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NTMFS6D1N08HT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

468 A

465 mJ

89 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0055 ohm

89 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

10 pF

NTMFS6H801NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

706 mJ

160 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0033 ohm

160 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

30 pF

NTP110N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NVHL055N60S5F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

275 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

159 A

417 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.055 ohm

45 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

AEC-Q101

NVMFD5C446NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

644 A

171 mJ

145 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0039 ohm

25 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

48 pF

AEC-Q101

NVMFD6H852NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

98 A

86 mJ

7 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0315 ohm

7 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

4 pF

AEC-Q101

NVMFS2D3P04M8LT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

185 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

220 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.003 ohm

32 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5844NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

107 W

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61 A

1

e3

30

260

NVMFS5A160PLZT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

335 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0105 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5C426NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

128 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

739 mJ

235 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0013 ohm

235 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

59 pF

AEC-Q101

NVMFS5C426NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

128 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

739 mJ

235 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0013 ohm

235 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

59 pF

AEC-Q101

NVMFS5C456NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

520 A

202 mJ

87 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.006 ohm

87 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

21 pF

AEC-Q101

NVMFS5C612NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

451 mJ

225 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00165 ohm

225 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

30 pF

AEC-Q101

NVMFS5C645NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

820 A

185 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0057 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

17 pF

AEC-Q101

NVMFS6H836NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

432 A

521 mJ

74 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0067 ohm

74 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

8 pF

AEC-Q101

NVMTS0D6N04CTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

245 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

2058 mJ

533 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00048 ohm

533 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

199 pF

AEC-Q101

NVTFS5124PLTWG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

18 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

8.5 mJ

6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

6 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

SCH1430-TL-W

Onsemi

Tin/Bismuth (Sn/Bi)

e6

2SJ661-DL-1E

Onsemi

MATTE TIN

1

e3

30

245

2SK4198FS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

55 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.34 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

ATP204-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

60 W

1

100 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.