FDZ1323NZ by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDZ1323NZ
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN SILVER COPPER;
Datasheet	FDZ1323NZ Datasheet
In Stock	25,428

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	R-PBGA-B6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	380 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
25,428	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;