Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FCA47N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

141 A

1800 mJ

47 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.07 ohm

47 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FCB11N60TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263

e3

30

245

FCD9N60NTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

92.6 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

135 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.385 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FCP36N60N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

1800 mJ

36 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.09 ohm

36 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FCP9N60N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

135 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

62.8 ns

-55 Cel

114.2 ns

MATTE TIN

.385 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FCPF11N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FCPF380N60-F154

Onsemi

Matte Tin (Sn) - annealed

e3

FCPF400N80ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

339 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FCPF850N80Z

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

6 A

e3

NOT SPECIFIED

NOT SPECIFIED

FDB024N04AL7

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

876 A

864 mJ

219 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0024 ohm

100 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

245

FDB024N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

395 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1060 A

2531 mJ

265 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0024 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDB0250N807L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1110 A

633 mJ

240 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

174 ns

-55 Cel

189 ns

Matte Tin (Sn) - annealed

.0022 ohm

240 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

165 pF

FDB031N08

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

940 A

1995 mJ

235 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0031 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDB14N30TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

330 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.29 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263

e3

30

245

FDB8441

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

947 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0025 ohm

28 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDB86569-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

MATTE TIN

.0056 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDBL86063

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

357 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 mJ

240 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

51 ns

Matte Tin (Sn) - annealed

.0026 ohm

240 A

SINGLE

R-PSSO-F2

1

DRAIN

MO-299A

e3

30

260

32 pF

FDBL86563-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

357 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

614 mJ

240 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

160 ns

-55 Cel

200 ns

MATTE TIN

.0015 ohm

240 A

SINGLE

R-PSSO-F2

1

DRAIN

MO-299A

e3

30

260

AEC-Q101

FDC642P-F085P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

72 mJ

4 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.2 W

150 Cel

SILICON

23 ns

-55 Cel

53 ns

.065 ohm

4 A

DUAL

R-PDSO-G6

1

30

260

AEC-Q101

FDD2670

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

375 mJ

3.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.13 ohm

3.6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDD8444L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

153 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

295 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0065 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD86580-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 mJ

50 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

34 ns

-55 Cel

30 ns

Matte Tin (Sn) - annealed

.01 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD8880-G

Onsemi

MATTE TIN

1

e3

30

260

FDMC86116LZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

19 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

15 A

12 mJ

7.5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.103 ohm

3.3 A

DUAL

S-PDSO-N5

1

DRAIN

e4

30

260

FDMC86244

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

12 mJ

15 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.134 ohm

2.8 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

30

260

FDMC8854

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

30 A

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0057 ohm

15 A

DUAL

S-PDSO-F8

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMS3572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

22 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.029 ohm

8.8 A

DUAL

R-PDSO-N8

1

Not Qualified

e4

30

260

FDMS3672

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

30 A

22 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

.023 ohm

22 A

DUAL

R-XDSO-N8

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMS4435BZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

50 A

18 mJ

35 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.02 ohm

9 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

MO-240AA

e3

30

260

FDMS5672

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

22 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.018 ohm

10.6 A

DUAL

R-PDSO-N8

1

Not Qualified

e4

30

260

FDMS7656AS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

242 mJ

194 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0018 ohm

31 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

FDMS86201

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

264 mJ

65 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0115 ohm

11.6 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

FDMS86202ET120

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

187 W

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

538 A

600 mJ

102 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

50.5 ns

-55 Cel

56.2 ns

Matte Tin (Sn) - annealed

.0072 ohm

102 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

30 pF

FDMS86520

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

69 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

80 A

86 mJ

42 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0074 ohm

14 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

FDMS86550ET60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

187 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1068 A

937 mJ

245 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

112 ns

-55 Cel

87 ns

Matte Tin (Sn) - annealed

.00165 ohm

245 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

FDP045N10A_F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

656 A

637 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

120 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FDP8441

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

947 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0027 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDPF15N65

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

73.5 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

637 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.44 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDPF190N15A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

261 mJ

27.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.019 ohm

27.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDPF20N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

62 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1110 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

FDS4953

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.055 ohm

5 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

FDS6682

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

34 ns

-55 Cel

99 ns

MATTE TIN

.0075 ohm

14 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

237 pF

FDS8878

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

57 mJ

10.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

10.2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDS8878-F123

Onsemi

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

10.2 A

1

e3

30

260

FDS8962C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

FDSS2407

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

2.27 W

PLASTIC/EPOXY

SWITCHING

62 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

140 mJ

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.11 ohm

3.3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDWS9510L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

32 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

20 ns

-55 Cel

222 ns

MATTE TIN

.0135 ohm

50 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

AEC-Q101

FQA10N80C-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

920 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.