Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVD6824NLT4G-VF01

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

238 A

80 mJ

41 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.023 ohm

41 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVF2955PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17 A

225 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.185 ohm

1.7 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

e3

30

260

AEC-Q101

NVMFD5C446NWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

637 A

223 mJ

127 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0029 ohm

24 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5C410NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

706 mJ

330 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0012 ohm

330 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

116 pF

AEC-Q101

NVMFS5C460NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NVMFS5C682NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6H836NWFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

432 A

521 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0067 ohm

74 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

8 pF

AEC-Q101

NVMTS0D7N06CLTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

294.6 W

PLASTIC/EPOXY

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1754 mJ

477 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0009 ohm

477 A

DUAL

R-PDSO-N5

1

DRAIN

e3

30

260

AEC-Q101

NVTFS5826NLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

127 A

20 mJ

20 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

7.6 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FCH104N60F-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

809 mJ

37 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

78 ns

-55 Cel

131 ns

Matte Tin (Sn) - annealed

.104 ohm

37 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FCMT125N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

181 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

115 mJ

24 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.125 ohm

24 A

SINGLE

S-PSSO-N4

1

DRAIN

30

260

FDD24AN06LA0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 mJ

40 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

195 ns

-55 Cel

101 ns

.019 ohm

7.1 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

AEC-Q101

FDD8778

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

145 A

24 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.014 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDMC2674

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

220 V

FLAT

SQUARE

ENHANCEMENT MODE

1

13.8 A

13 mJ

1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.366 ohm

1 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMS86150

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

300 A

726 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.00485 ohm

16 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

FDPF2D3N10C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

888 A

1176 mJ

222 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2.4 W

175 Cel

SILICON

123 ns

-55 Cel

175 ns

Matte Tin (Sn) - annealed

.0023 ohm

120 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

75 pF

NTD20N06T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

170 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.046 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

235

NTMTS0D6N04CLTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

245.4 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

2058 mJ

554.5 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00066 ohm

554.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

299 pF

NVD5807NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

29.4 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.031 ohm

23 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

NVMFD5C478NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

98 A

48 mJ

29 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.025 ohm

10.5 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

9 pF

AEC-Q101

NVMFS5C680NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.4 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

87 A

44.6 mJ

8.1 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.043 ohm

8.1 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

5 pF

AEC-Q101

NTMFS5C612NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

451 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn) - annealed

.0015 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NTMFS5C404NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

907 mJ

378 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0007 ohm

378 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

120 pF

NVMFS6H852NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

54 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

208 A

207 mJ

42 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.017 ohm

42 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

6 pF

AEC-Q101

NVMFD6H840NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

336 A

297 mJ

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0088 ohm

14 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

11 pF

AEC-Q101

NDS9952A

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

15 A

3.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.08 ohm

3.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

IRL640A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63 A

64 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

FQPF2N60C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

120 mJ

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.7 ohm

2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NTMFS5H400NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

360 mJ

330 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0011 ohm

330 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

87 pF

FCB125N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

181 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

115 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.125 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

NVMJS1D3N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

128 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

739 mJ

235 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0013 ohm

235 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

59 pF

AEC-Q101

NTMFS6H801NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

166 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

960 mJ

157 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0044 ohm

157 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

NVMFS5H663NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

359 A

274 mJ

67 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.01 ohm

67 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

7.5 pF

AEC-Q101

NTBGS001N06C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

363 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.001 ohm

363 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

53 pF

NTHL045N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

304 A

64.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

64.2 A

SINGLE

R-PSFM-T3

TO-247

e3

14.53 pF

NVMFS6B14NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn) - annealed

.019 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NTMFS4925NT1G

Onsemi

48 A

FET General Purpose Power

MATTE TIN

1

Not Qualified

e3

30

260

NVHL080N120SC1A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

171 mJ

31 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.11 ohm

31 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

6.5 pF

AEC-Q101

FDD8876

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

95 mJ

73 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

149 ns

-55 Cel

122 ns

Matte Tin (Sn) - annealed

.01 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDPF16N50UT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38.5 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

610 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.48 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQPF11N40C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

44 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

360 mJ

10.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.53 ohm

10.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NDUL09N150CG

Onsemi

MATTE TIN

e3

NTMFD5C466NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

177 A

72 mJ

52 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0126 ohm

14 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

13 pF

NVD5C460NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

47 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

395 A

147 mJ

73 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0065 ohm

73 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

36 pF

AEC-Q101

RFD14N05SM9A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.1 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FCH165N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

525 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

101 ns

-55 Cel

257 ns

Matte Tin (Sn) - annealed

.165 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

8.6 pF

FDB86360-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1167 mJ

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0018 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDB8860-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

254 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

947 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0027 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.