NTBGS001N06C by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTBGS001N06C
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	NTBGS001N06C Datasheet
In Stock	90

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	363 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	6
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.001 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	488-NTBGS001N06CCT 488-NTBGS001N06CDKR 488-NTBGS001N06CTR
Maximum Feedback Capacitance (Crss):	53 pF
JEDEC-95 Code:	TO-263CB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	363 A
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
90	$15.580	$1,402.200

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