Onsemi Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDD6670A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

67 mJ

66 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

FAST SWITCHING

TO-252

e3

30

260

FDD6690A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

180 mJ

46 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0125 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e3

30

260

FDD86369-F085

Onsemi

N-CHANNEL

SINGLE

YES

150 W

1

90 A

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD8647L

Onsemi

N-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

33 mJ

52 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.009 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDD8796

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

305 A

91 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

FDD8874

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0064 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDD9509L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

82 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDMA420NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

24 A

24 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.04 ohm

5.7 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMA430NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.05 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

FDMA8878

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

10 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.016 ohm

9 A

DUAL

S-PDSO-N6

1

DRAIN

ULTRA-LOW RESISTANCE

e4

30

260

35 pF

FDMC2514SDC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

200 A

84 mJ

40 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0035 ohm

24 A

DUAL

S-PDSO-N5

1

DRAIN SOURCE

Not Qualified

ULTRA-LOW RESISTANCE

MO-240BA

e3

30

260

FDMS007N08LC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

92.6 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

345 A

181.5 mJ

84 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

31 ns

-55 Cel

77 ns

MATTE TIN

.0067 ohm

84 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

40 pF

FDMS0309AS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

66 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0035 ohm

21 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

FDMS2D5N08C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

823 A

600 mJ

166 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

54 ns

-55 Cel

60 ns

Matte Tin (Sn) - annealed

.0027 ohm

166 A

DUAL

R-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

85 pF

FDMS3500

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

384 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0145 ohm

9.2 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

FDMS4D4N08C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

498 A

486 mJ

123 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

46 ns

-55 Cel

50 ns

Matte Tin (Sn) - annealed

.0043 ohm

123 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

50 pF

FDMS4D5N08LC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

633 A

384 mJ

116 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

57 ns

-55 Cel

114 ns

.0042 ohm

116 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

40

260

65 pF

FDMS5352

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

600 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0067 ohm

13.6 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

FDMS7694

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

50 A

21 mJ

47 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0095 ohm

13.2 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

FDMS8027S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

33 mJ

22 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.005 ohm

18 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

FDMS86202

Onsemi

N-CHANNEL

SINGLE

YES

156 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

40 A

1

e3

30

260

FDP22N50N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312.5 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1000 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.22 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDP33N25

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

918 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.094 ohm

33 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDP42AN15A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.042 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDP86363-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

512 mJ

110 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0028 ohm

110 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FDP8870

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0046 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDPF045N10A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

43 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

268 A

637 mJ

67 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0045 ohm

67 A

SINGLE

R-PSFM-T3

ISOLATED

ULTRA-LOW RESISTANCE

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDPF18N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38.5 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

945 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.265 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

e3

FDPF8N50NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40.3 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

122 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FDS5351

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

73 mJ

6.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

6.1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDS8880

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

82 mJ

10.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

11.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDT4N50NZU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

124 mJ

3 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3 ohm

3 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

40

260

3 pF

FQA30N40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

1400 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FQA70N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

1300 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.023 ohm

70 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FQD12P10TM-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

370 mJ

9.4 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

370 ns

-55 Cel

210 ns

MATTE TIN

.29 ohm

9.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

85 pF

AEC-Q101

FQD13N10TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

95 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.18 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FQP13N10L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51.2 A

95 mJ

12.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.2 ohm

12.8 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e3

FQP17N40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

1000 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.27 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQP20N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

155 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP33N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

127 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

435 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.052 ohm

33 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQPF12N60C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

870 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.65 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQPF19N20C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

43 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

433 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.17 ohm

19 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQPF3N80C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

320 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

4.8 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQPF9N25C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35.2 A

285 mJ

8.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.43 ohm

8.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQU13N10LTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

95 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

e3

HUF76609D3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

49 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.168 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

MTB2P50ET4

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

80 mJ

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

NTB004N10G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

340 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3002 A

520 mJ

201 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

201 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

147 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.