FDMS4D4N08C by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDMS4D4N08C
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	FDMS4D4N08C Datasheet
In Stock	2,018

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	46 ns
Maximum Drain Current (ID):	123 A
Maximum Pulsed Drain Current (IDM):	498 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	5
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	50 ns
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0043 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	486 mJ
Maximum Feedback Capacitance (Crss):	50 pF
JEDEC-95 Code:	MO-240AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Maximum Drain Current (Abs) (ID):	123 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,018	$1.200	$2,421.600

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