Onsemi Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MTV32N25ERL

Onsemi

N-CHANNEL

SINGLE

YES

250 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

32 A

5HN01SP

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NTB30N06T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

101 mJ

27 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.042 ohm

27 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

MTP50N06VL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

147 A

265 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.032 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e0

235

3LN04SS

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.35 A

MTP52N06VL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

182 A

406 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.025 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e0

235

FCHD190N65S3R0-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

144 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42.5 A

76 mJ

17 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.19 ohm

17 A

SINGLE

R-PSFM-T3

TO-247AD

e3

NVMD4N03R2G

Onsemi

N-CHANNEL

YES

2 W

4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4 A

1

e3

30

260

SVC6H890N-DIE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2660 A

620 A

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.00053 ohm

620 A

UPPER

R-XUUC-N4

350 pF

AEC-Q101

FW282-TL-E

Onsemi

N-CHANNEL

YES

2.2 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

6 A

1

e6

NTB75N03L09T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

MTB50N06VLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

147 A

265 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.032 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

2SK4177

Onsemi

N-CHANNEL

SINGLE

NO

80 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

SCH2411

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

NTP082N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

510 mJ

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.082 ohm

40 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

70 pF

NVD4804NT4G-VF01

Onsemi

MATTE TIN

1

e3

30

260

FDU3N50NZTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

114 mJ

2.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

105 ns

Matte Tin (Sn) - annealed

2.5 ohm

2.5 A

SINGLE

R-PSIP-T3

TO-251AA

e3

5 pF

MTB9N25ET4

Onsemi

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

NTLJF1103PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

17 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.135 ohm

2.4 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

NTB30N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

101 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.046 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

FTD2017C-TL

Onsemi

N-CHANNEL

YES

1.4 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NTMSD6N303R2SG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

325 mJ

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.032 ohm

6 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

30

260

NXV65HR82DZ2

Onsemi

MMDF2C02HDR2

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

19 A

405 mJ

3.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

3.8 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

e0

235

NVC040N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

348 W

UNSPECIFIED

SWITCHING

1200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

240 A

613 mJ

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.056 ohm

60 A

UNSPECIFIED

R-XUUC-N4

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

12 pF

AEC-Q101

BMS3004

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

272 A

380 mJ

68 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2 W

SILICON

.0114 ohm

68 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NTD65N03R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

71.7 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0146 ohm

32 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

235

NVD4815NT4G

Onsemi

Tin (Sn)

1

e3

NTMYS020N08LHTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

142 A

198 mJ

30 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

5 pF

NTP45N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

240 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.026 ohm

45 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

FCB260N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

57 mJ

12 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.26 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

MGSF2N02ELT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

2.8 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

235

NTB75N03RT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

74.4 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

71.7 mJ

9.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.013 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

MTP12P10G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.3 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

40

260

MTP52N06VLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

182 A

406 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.025 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

260

MTB60N05HDLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

540 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

FCB20N60F-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

405 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

217.8 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.195 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

MCH6622

Onsemi

N-CHANNEL

YES

.8 W

ENHANCEMENT MODE

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

NTP4302

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

175 A

722 mJ

74 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0093 ohm

74 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

NTD6600NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

72 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.146 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

MTB10N40E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

520 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

MMDF1N05ER2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

300 mJ

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.3 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

NID9N05CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.8 W

PLASTIC/EPOXY

SWITCHING

52 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

160 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.181 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

e3

260

NDP08N60ZG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

235 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

7.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NTHD2102PT1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

4.6 A

3.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.058 ohm

3.4 A

DUAL

R-XDSO-C8

Not Qualified

e0

235

MTB60N06HDT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

540 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

2SK4124

Onsemi

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

20 A

NTPF125N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

67 A

216 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.