NDP08N60ZG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NDP08N60ZG
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
Datasheet	NDP08N60ZG Datasheet
In Stock	786

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	7.5 A
Maximum Pulsed Drain Current (IDM):	30 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.95 ohm
Avalanche Energy Rating (EAS):	235 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
786	-	-

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