Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FQB8N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	230 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.2 ohm	7.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
SFT1445(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	35 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
3LN01C	Onsemi	N-CHANNEL	SINGLE	YES	.25 W						ENHANCEMENT MODE	1			.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.15 A
2SK4196LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	93.8 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	1.56 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
FDU8796_F071	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	305 A	91 mJ	35 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	59 ns	-55 Cel	249 ns		.008 ohm	35 A	SINGLE	R-PSIP-T3				AVALANCHE RATED	TO-251AA		NOT SPECIFIED	NOT SPECIFIED	475 pF
NTQD6968NR2G	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.03 ohm	6.2 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NIC9N05ACLF	Onsemi
NTD78N03R-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	76.9 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	98 A	75 mJ	85 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.009 ohm	11.3 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
6HN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.2 A
5LN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.1 A
FDWS86380-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		16 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	31 ns	-55 Cel	30 ns	Matte Tin (Sn) - annealed	.0134 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NILMS4501NR2G	Onsemi	N-CHANNEL	CURRENT MIRROR WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	24 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	50 mJ	9.5 A	4	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.016 ohm	9.5 A	BOTTOM	R-PBCC-N4	1	DRAIN	Not Qualified			e3		260
ATP301-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	54 mJ	28 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.075 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
MTD6N15T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0	NOT SPECIFIED	235
NTD18N06-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.06 ohm	18 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
MTD20P03HDLG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	57 A	200 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.099 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
EFC4612R-TR	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	DEPLETION MODE	2				4	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin/Silver/Copper (Sn/Ag/Cu)			BOTTOM	S-PBGA-B4	1					e1
FDB9406L-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	176 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		217 mJ	110 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	90 ns	-55 Cel	145 ns	MATTE TIN	.0022 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260		AEC-Q101
NID9N05BCLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.74 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	950 ns	-55 Cel	3850 ns	MATTE TIN	.181 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	40 pF
FDI9406-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		174 mJ	110 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0022 ohm	110 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AB	e3				AEC-Q101
NTL4502NT1	Onsemi	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	24 V	NO LEAD	SQUARE	ENHANCEMENT MODE	4	32 A	80 mJ		16	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.013 ohm	11.4 A	QUAD	S-XQCC-N16		DRAIN	Not Qualified			e0		235
NVB260N65S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	57 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.26 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
ATP213	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							50 A
NTMKB4896NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	149 mJ		2	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	13 A	BOTTOM	R-XBCC-N2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FDP6670AL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	114 mJ	80 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	46 ns	-65 Cel	95 ns		.0065 ohm	80 A	SINGLE	R-PSFM-T3					TO-220AB
MLD2N06CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	58 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.4 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION		e3	40	260
BFL4004-1E	Onsemi	N-CHANNEL	SINGLE	NO	36 W							1			4.3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		4.3 A								e3
NTDV20N06T4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	Matte Tin (Sn) - annealed	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
NTLJF3118NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.085 ohm	2.6 A	DUAL	S-PDSO-N6			Not Qualified			e3
FDA15N65	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	UNSPECIFIED		650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	637 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.44 ohm	16 A	SINGLE	R-XSFM-T3			Not Qualified	FAST SWITCHING		e3
NTPF450N80S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32.5 A		13 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.45 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FQA70N15	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	1000 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	70 A	SINGLE	R-PSFM-T3			Not Qualified			e3
NTMKE4891NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	210 A	184 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0026 ohm	26.7 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NVMJS1D5N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	493 mJ	200 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	200 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	72 pF	AEC-Q101
NTB70N08L	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD			SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTMSD6N303R2G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	3		Not Qualified			e3	40	260
NTB45N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.026 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0	30	235
FQU1N80TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A	90 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	20 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e3
NDD04N50ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	61 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0027 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB75N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.011 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTH4L067N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	266 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	422 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.067 ohm	40 A	SINGLE	R-PSFM-T4					TO-247	e3
FTS2051	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.5 A
FDA032N08	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	940 A	1995 mJ	235 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0032 ohm	120 A	SINGLE	R-PSFM-T3			Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTLMS4502N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	UNSPECIFIED	SWITCHING	24 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	40 A	220 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0108 ohm	12 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0
MTP30N06VL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	105 A	154 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.05 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
FX210	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									4 A
MMSF3P02HDR1	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			5.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.095 ohm	3 A	DUAL	R-PDSO-G8			Not Qualified			e0
NVTYS002N03CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		30 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	675 A	320 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.2 W	175 Cel	SILICON		-55 Cel		MATTE TIN	.0031 ohm	29 A	DUAL	R-PDSO-X8	1	DRAIN				e3	30	260	43 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.