Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MTB52N06VL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	165 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	182 A	406 mJ	52 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.025 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0		235
NDD05N50Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	130 mJ	3 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.5 ohm	4.7 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
MMDF2N02ER2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	245 mJ	3.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.1 ohm	3.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
MTW20N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	2000 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.24 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0	30	235
FCMT080N65S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	260 W	PLASTIC/EPOXY	SWITCHING	650 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	95 A	180 mJ	38 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.08 ohm	38 A	SINGLE	S-PSSO-N4	1	DRAIN				e3	30	260
CPH5616	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.7 A
FCU4300N80Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	27.8 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3.2 A	8.2 mJ	1.6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	53 ns	-55 Cel	94 ns	MATTE TIN	4.3 ohm	1.6 A	SINGLE	R-PSIP-T3					TO-251AA	e3
NVH050N65S3F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	403 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	145 A	830 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.05 ohm	58 A	SINGLE	R-PSFM-T3		DRAIN			TO-247	e3			13 pF	AEC-Q101
NIF62514G	Onsemi	N-CHANNEL	SINGLE	YES	8.93 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
PCFA86062F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ		3	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.002 ohm	315.7 A	UPPER	R-XUUC-N3									29 pF	AEC-Q101
NVTYS003N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	740 A	215 mJ	107 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0052 ohm	107 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	42 pF	AEC-Q101
MMDF2P02ER2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13 A	245 mJ	2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.25 ohm	2.5 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260
NTD600N80S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	24 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
NTLJS4159NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	28 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.045 ohm	3.6 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTDV3055L104T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.104 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED
NTGS3433T1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		1.65 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	235 ns	TIN LEAD	.075 ohm	2.35 A	DUAL	R-PDSO-G6	1		Not Qualified			e0			200 pF
FSS203	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR								8 A
NTD18N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NDPL180N10BG	Onsemi
FDB9403L-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	333 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		634 mJ	110 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	156 ns	-55 Cel	399 ns	Matte Tin (Sn) - annealed	.0016 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
NTPF250N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	108 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.25 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
MTB6N60E	Onsemi	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN LEAD		6 A								e0		235
NDD60N550U1-35G	Onsemi																													3
5HN01C	Onsemi	N-CHANNEL	SINGLE	YES	.25 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.1 A
NTB4302T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	722 mJ	74 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0093 ohm	74 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NDP06N60ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	113 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.2 ohm	7.1 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK4067(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	10 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
NTD60N03-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	28 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	733 mJ	60 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0075 ohm	60 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
FDJ1027P	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	39 ns	-55 Cel	55 ns		.16 ohm	2.8 A	DUAL	R-PDSO-F6		DRAIN							29 pF
ATP108-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	60 W							1			70 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		70 A			1					e6	30	260
NTB75N03-6G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0065 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN		ULTRA LOW RESISTANCE		e3	30	260
NTP165N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	142 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	53 A	163 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.165 ohm	19 A	SINGLE	R-PSFM-T3					TO-220AB	e3
NTD12N10G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56.6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	75 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.165 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTB30N20T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	450 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.081 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
TN8R01	Onsemi	N-CHANNEL		NO	25 W						ENHANCEMENT MODE				2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							2.5 A
NVD4805NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	288 mJ	95 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0074 ohm	12.7 A	SINGLE	R-PSSO-G2	1	DRAIN				e3				AEC-Q101
NTMD4102PR2	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.019 ohm	6.5 A	DUAL	R-PDSO-G8			Not Qualified			e0
FCU360N65S3R0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	40 mJ	10 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.36 ohm	10 A	SINGLE	R-PSIP-T3					TO-251AA	e3	NOT SPECIFIED	NOT SPECIFIED
MTP50P03HDL	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	1250 mJ	50 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn80Pb20)	.025 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
NTD12N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56.6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	75 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.165 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FW276-TL-2H	Onsemi																								TIN					1					e3
3LN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.15 A
NVATS5A107PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	165 A	80 mJ	55 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN BISMUTH	.017 ohm	55 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
FQS4900TF	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	5.2 A		1.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.65 ohm	1.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FCU340080Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A	12.8 mJ	2 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	53 ns	-55 Cel	93 ns		3.4 ohm	2 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED	.36 pF
FQP9N50C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	360 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.8 ohm	9 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
MTD1P40E1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.5 A	45 mJ	1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	8 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTB45N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.028 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.