Onsemi - NTLJS4159NT1G

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NTLJS4159NT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJS4159NT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 30 V; Terminal Form: C BEND;
Datasheet NTLJS4159NT1G Datasheet
In Stock1,838
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.6 A
Maximum Pulsed Drain Current (IDM): 28 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,838 $0.184 $338.192

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