Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
2SK4204LS	Onsemi	N-CHANNEL	SINGLE	NO	35 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A
FSS204	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									8 A
MTD6N15T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel		TIN	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NDP11N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	420 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.52 ohm	6.7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
FDP4D5N10C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	512 A	486 mJ	128 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	2.4 W	175 Cel	SILICON	126 ns	-55 Cel	90 ns	Matte Tin (Sn) - annealed	.0045 ohm	91 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	35 pF
NTMJS0D7N03CGTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY	SWITCHING	30 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1080 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.00065 ohm	59 A	DUAL	R-PDSO-X8	1	DRAIN				e3	30	260	88 pF
NTLMS4501N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	30 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.0135 ohm	7 A	BOTTOM	R-XBCC-N3			Not Qualified			e0
SFT1427(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							7 A
NTD95N02R-001G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		84 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.005 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
NTD12N08	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.165 ohm		SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
SVD5865NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	203 A	36 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		Matte Tin (Sn) - annealed	.019 ohm		SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
MMSF3P02HDR2G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	567 mJ	5.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.075 ohm	5.6 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260
MCH6620	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.4 A
NVTYS029N08HLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY		80 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	80 A	76 mJ	6.3 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.032 ohm	6.3 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	3.6 pF	AEC-Q101
EFC2K102NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.1 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	R-XBCC-N10		SOURCE					NOT SPECIFIED	NOT SPECIFIED
NTB85N03T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0068 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
VEC2402	Onsemi	N-CHANNEL		YES	1 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
FDMT80060DC	Onsemi	N-CHANNEL	SINGLE	YES	156 W							1			292 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		292 A			1					e3	30	260
NTB4302G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	722 mJ	74 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0093 ohm	74 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MTP30N6VL	Onsemi	N-CHANNEL	SINGLE	NO	90 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel
NTP7D3N15MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	166 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	574 A	600 mJ	101 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0073 ohm	12.1 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				15 pF
EFC6604R-TR	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING		BALL	RECTANGULAR	DEPLETION MODE	2				6	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR			SILICON							BOTTOM	R-PBGA-B6
MTP33N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	99 A	545 mJ	33 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN LEAD	.06 ohm	33 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
NTC015N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	774 W	UNSPECIFIED	SWITCHING	650 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	1006 A		159 A	4	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel				159 A	UPPER	R-XUUC-N4
NDD02N40-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	1.7 A	SINGLE	R-PSIP-T3	3	DRAIN				e3	30	260
FSS216	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									10 A
EMH2401	Onsemi	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
MTD20N06HD-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ	20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.045 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e0
3SK107F	Onsemi	N-CHANNEL	SINGLE	NO	.25 W							1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel							.03 A
FCA35N60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	312.5 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	105 A	1455 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.098 ohm	35 A	SINGLE	R-PSFM-T3			Not Qualified			e3
MMSF3350R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1000 mJ	7.4 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.011 ohm	7.4 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NDP7060	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	550 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.013 ohm	75 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
2SK4171	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	370 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.0105 ohm	100 A	SINGLE	R-PSFM-T3					TO-220AB
MTP15N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	113 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.12 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
MTP7N20E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	74 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.7 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MCH6408	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
MTD2955VT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
FDI045N10A_F102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	263 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	656 A	637 mJ	120 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0045 ohm	120 A	SINGLE	R-PSIP-T3				ULTRA-LOW RESISTANCE	TO-262AA	e3
NTMD6N04R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	29 A	245 mJ	5.8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.034 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
MTB50N06VT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	147 A	400 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.028 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
2SK4197FG	Onsemi	N-CHANNEL	SINGLE	NO	28 W						ENHANCEMENT MODE	1			3.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.3 A
NTB30N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	101 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.046 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
SCH1417	Onsemi	N-CHANNEL	SINGLE	YES	.65 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.8 A
MTB2N40E	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		2 A								e0		235
NVATS5A112PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	81 A	50 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN BISMUTH	.043 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
FDQ7236AS	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	50 A		14 A	14	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.0132 ohm	11 A	DUAL	R-PDSO-G14	1					e4	30	260
6LN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.2 A
CPH3440	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							7 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.