Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MMDF1N05ER2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	300 mJ	2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.3 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0	30	235
ATP613TL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	93 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					2 ohm	5.5 A	SINGLE	R-PSSO-G2		DRAIN
MTB2N40ET4	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		2 A								e0
NTMJS1D6N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	451 mJ	250 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0023 ohm	250 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
NTB75N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.011 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTPF095N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	284 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.095 ohm	30 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
FCHD040N65S3-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	162.5 A	358 mJ	65 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.04 ohm	65 A	SINGLE	R-PSFM-T3					TO-247AD	e3
2SK4096LS-1E	Onsemi	N-CHANNEL	SINGLE	NO	33 W							1			7.1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		7.1 A								e3
NTDV20P06LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	200 ns	-55 Cel	185 ns	MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
MTP5N40E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	290 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
FDME820NZT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A		9 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	.018 ohm	9 A	DUAL	S-PDSO-N3	1	DRAIN				e4	NOT SPECIFIED	NOT SPECIFIED	190 pF
NTLMS4505N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	24 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	220 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0042 ohm	20 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0
NDB6060	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ	48 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	320 ns	-65 Cel	210 ns		.025 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				400 pF
NTHD3101FT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	13 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.08 ohm	3.2 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260
NTD65N03R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A			3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.0146 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
NTD18N06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.06 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
EFC6602R-TR	Onsemi																													1						30	260
ATP207	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							65 A
NVATS5A114PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	72 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	100 mJ	60 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN BISMUTH	.016 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
FQP6N40C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	270 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1 ohm	6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NVB6412ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	300 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0182 ohm	58 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
SFT1440-H	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		1.5 A								e6
NDD03N80Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	100 mJ	2.9 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.5 ohm	1.9 A	SINGLE	R-PSIP-T3	3	DRAIN				e3	30	260
MMDF4P03HDR2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	450 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.085 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
NDD01N60T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	13 mJ	1.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	8.5 ohm	1.5 A	SINGLE	R-PSSO-G2	3	DRAIN				e3
MTD1N50EG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
EFC2K103NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.3 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON							BOTTOM	R-XBCC-N10		SOURCE					NOT SPECIFIED	NOT SPECIFIED
MTP4N80E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	320 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MMSF5N02HDR2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41 A	675 mJ	8.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.025 ohm	8.2 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE		e0		235
NTMS4101PR2G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.38 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.019 ohm	6.9 A	DUAL	R-PDSO-G8			Not Qualified
MTB16N25ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	384 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.25 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTP60N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.014 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
MTB50N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	147 A	400 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN LEAD	.028 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
MCH6604	Onsemi	N-CHANNEL		YES							ENHANCEMENT MODE				.25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.25 A
FDMT800152DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	413 A	113 mJ	72 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	62 ns	-55 Cel	74 ns	Matte Tin (Sn) - annealed	.009 ohm	72 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	30 pF
NTPF3D2N12MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		490 mJ	83 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0032 ohm	83 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	32 pF
NDD03N50ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	58 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	120 mJ	2.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0033 ohm	2.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MTY55N20E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	165 A	3000 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.028 ohm	55 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-264AA	e0	30	235
NVTYS013N10MCLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	83 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0136 ohm	11.9 A	DUAL	R-PDSO-X8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	7 pF	AEC-Q101
MCH6445	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
NVTYS004N04CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	520 A	202 mJ	20 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.004 ohm	20 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	21 pF	AEC-Q101
MTD9N10ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	40 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.25 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTHS2101PT1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	UNSPECIFIED	SWITCHING	8 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	7.5 A		5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.025 ohm	5.4 A	DUAL	R-XDSO-C8			Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NVTYS005N04CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	321 A	104 mJ	19 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0048 ohm	19 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
MTD20N06HDT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MTB4N80E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	320 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTLMS4501NR2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	30 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.0135 ohm	7 A	BOTTOM	R-XBCC-N3			Not Qualified
MTP30P06V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	105 A	450 mJ	30 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.08 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.