Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0095 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
78.1 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
192 A |
85 mJ |
12 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0052 ohm |
85 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
26 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.4 A |
12 mJ |
.8 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
15 ohm |
.8 A |
SINGLE |
R-PSSO-G2 |
3 |
DRAIN |
e3 |
30 |
260 |
3 pF |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
280 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0085 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
235 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
25 W |
1 |
.8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.8 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
9 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR |
YES |
40 W |
PLASTIC/EPOXY |
SWITCHING |
58 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 mJ |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.4 ohm |
2 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION |
e3 |
40 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
620 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
120 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
2 ohm |
4.4 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
3.4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.135 ohm |
2.7 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.9 W |
ENHANCEMENT MODE |
1 |
2.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
2.5 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
1742 mJ |
70 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.035 ohm |
70 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
FAST SWITCHING |
e3 |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.6 W |
ENHANCEMENT MODE |
1 |
.7 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
.7 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.9 W |
ENHANCEMENT MODE |
1 |
1.8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
1.8 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.6 W |
ENHANCEMENT MODE |
1 |
.3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.3 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
48.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
45 A |
61 mJ |
15 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.09 ohm |
15 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
235 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
136 W |
PLASTIC/EPOXY |
60 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
220 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.00237 ohm |
220 A |
DUAL |
R-PDSO-X5 |
1 |
DRAIN |
e3 |
30 |
260 |
31 pF |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1.5 W |
1 |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
4 A |
1 |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.57 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
600 mJ |
32 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.08 ohm |
32 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0012 ohm |
330 A |
DUAL |
R-PDSO-X5 |
1 |
DRAIN |
e3 |
30 |
260 |
77 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
TIN BISMUTH |
1 |
e6 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1 W |
ENHANCEMENT MODE |
1 |
2.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
2.6 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
1.5 W |
ENHANCEMENT MODE |
2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
2 A |
||||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
21 A |
324 mJ |
4.1 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.07 ohm |
4.1 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1.5 W |
1 |
3.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
3.5 A |
1 |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
83 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
25 A |
40 mJ |
10 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.36 ohm |
10 A |
DUAL |
R-PDSO-N5 |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
ENHANCEMENT MODE |
1 |
.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.2 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
3 |
FLANGE MOUNT |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
578 mJ |
288 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.001 ohm |
288 A |
DUAL |
R-PDSO-X5 |
DRAIN |
70 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
107.1 W |
PLASTIC/EPOXY |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
382 A |
1301 mJ |
61.3 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.015 ohm |
61.3 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
10.5 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
198.4 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4700 A |
1512 mJ |
9 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.00057 ohm |
300 A |
DUAL |
R-PDSO-F9 |
DRAIN |
227 pF |
AEC-Q101 |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
59 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.8 A |
80 mJ |
2.75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.75 ohm |
2.75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e0 |
235 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
289 mJ |
7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.1 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
TO-220AB |
||||||||||||||||||||||
|
Onsemi |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
10 W |
ENHANCEMENT MODE |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
8 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
YES |
115 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
450 mJ |
52 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.02 ohm |
52 A |
SINGLE |
R-PSSO-G4 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
.6 W |
DEPLETION MODE |
.3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.3 A |
|||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
1 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
1 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
44 W |
1 |
61 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) - annealed |
61 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.019 ohm |
7.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
45 mJ |
1 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
9 ohm |
1 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
235 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
20 mJ |
1 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
12 ohm |
1 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
39 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
145 A |
24 mJ |
40 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
47 ns |
-55 Cel |
120 ns |
.014 ohm |
35 A |
SINGLE |
R-PSIP-T3 |
TO-251AA |
NOT SPECIFIED |
NOT SPECIFIED |
162 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
106 W |
PLASTIC/EPOXY |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
338 mJ |
185 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0017 ohm |
185 A |
DUAL |
R-PDSO-X5 |
1 |
DRAIN |
e3 |
30 |
260 |
45 pF |
AEC-Q101 |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
1500 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0065 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
2.2 W |
ENHANCEMENT MODE |
1 |
3.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
3.5 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
117 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
.61 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
TO-220AB |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
78 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
60 mJ |
65 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0105 ohm |
7.6 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
235 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
60 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
75 A |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.