Onsemi - FCMS360N65S3

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FCMS360N65S3 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FCMS360N65S3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 10 A;
Datasheet FCMS360N65S3 Datasheet
In Stock2,314
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 40 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 25 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 5
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 83 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 10 A
Maximum Drain-Source On Resistance: .36 ohm
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