Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTP30N20G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	178 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	90 A	450 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.081 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	40	260
SFT1450(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	23 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							21 A
EFC6602R-A-TR	Onsemi	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							18 A			1						30	260
MTY16N80E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	1280 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.5 ohm	16 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-264AA	e0		235
MTP5P06V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.45 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MCH6445-TL-W	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		4 A			1					e6	30	260
SFT1423(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2 A
FTD8007	Onsemi	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
FQP6N70	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24.8 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.5 ohm	6.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
TM3055B(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
NTD15N06-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.09 ohm	15 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTDV20P06LT4G-VF01	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15.5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	200 ns	-55 Cel	185 ns	MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
NVTYS025N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	80 A	51 mJ	7.82 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0425 ohm	7.82 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	6 pF
MTD9N10EG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	40 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.25 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NIF9N05CLT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.69 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.125 ohm	2.6 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0	30	235
FQB6N40CTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	270 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING	TO-263AB	e3	30	245
NTLJS3113PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	23 A		7.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	3.5 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NVBGS1D2N08H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	259 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1500 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.00134 ohm	290 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3	30	260	45 pF	AEC-Q101
MTD10N10ELT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
NDF06N62ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	113 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.2 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
FCU900N65S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11.3 A		4.5 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.9 ohm	4.5 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED
FDP5N50NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	160 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.5 ohm	4.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
2SK4126	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	132 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.72 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH RELIABILITY	TO-220AB
MTD15N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	113 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.12 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTP150N65S3HF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	275 mJ	24 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.15 ohm	24 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
MTD12N06EZLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	72 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.18 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED		e0
MTD20N03HDLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.04 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
NVATS5A106PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	30 mJ	33 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN BISMUTH	.025 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
FDB6030BL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	37 ns	-65 Cel	53 ns		.018 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB
MTP40N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	169 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	800 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.04 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NDP04N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	120 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0027 ohm	3.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
FW217A-TL-2W	Onsemi																								MATTE TIN					1					e3	30	260
EFC2J013NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.8 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON							BOTTOM	R-PBCC-N6							NOT SPECIFIED	NOT SPECIFIED
NTB75N03-06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0065 ohm	75 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NVATS4A101PZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	81 A	25 mJ	27 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN BISMUTH	.03 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
NTMYS6D2N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	61 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A	166 mJ	71 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0088 ohm	17 A	SINGLE	R-PSSO-G4	1					e3	30	260	15 pF
SCH2410	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE				.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.2 A
FDMT800150DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	561 A	1093 mJ	99 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	79 ns	-55 Cel	85 ns	Matte Tin (Sn) - annealed	.0065 ohm	99 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	30 pF
NTP75N03-06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0065 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
MTY100N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	250 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.011 ohm	100 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-264AA	e0		235
NTLUD4C26NTAG	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	22 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.021 ohm	4.8 A	DUAL	S-PDSO-N6	1	DRAIN				e3	30	260	27 pF
NTHD3100CT3G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified			e3		260
FCD500N65S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17.5 A		7 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.5 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA	e3	NOT SPECIFIED	NOT SPECIFIED
NTB90N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTLJF4156NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.21 W	PLASTIC/EPOXY	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	20 A		2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.09 ohm	2.5 A	DUAL	S-PDSO-C6	1	DRAIN	Not Qualified			e3	30	260
EMH2409TL	Onsemi	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
FSS264	Onsemi	N-CHANNEL	SINGLE	YES	2.4 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
NTQD6968NR2	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.