Onsemi - EFC6602R-A-TR

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EFC6602R-A-TR by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EFC6602R-A-TR
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
Datasheet EFC6602R-A-TR Datasheet
In Stock79
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 18 A
Maximum Drain Current (Abs) (ID): 18 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
79 $0.236 $18.644

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