EFC6602R-A-TR by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	EFC6602R-A-TR
Description	N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
Datasheet	EFC6602R-A-TR Datasheet
In Stock	2,644

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	2 W
Maximum Time At Peak Reflow Temperature (s):	30
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	18 A
Maximum Drain Current (Abs) (ID):	18 A
Sub-Category:	FET General Purpose Power
Peak Reflow Temperature (C):	260
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,644	-	-

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