Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTD70N03R-001G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	71.7 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.013 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
MTD2N50ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	100 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.6 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTMJS0D9N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	706 mJ	330 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0012 ohm	330 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	77 pF
MTB3N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	2.2 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
FQU1N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A	33 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					11.5 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED, FAST SWITCHING			NOT SPECIFIED	NOT SPECIFIED
3SK108R	Onsemi	N-CHANNEL	SINGLE	NO	.25 W							1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							.03 A
NTMYS9D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ	50 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.013 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	11 pF
NTLGF3402PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	11 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.14 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3		260
NTLUS4195PZTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	17 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.09 ohm	2 A	DUAL	S-PDSO-N3	1	DRAIN	Not Qualified			e3
FW232A-TL-E	Onsemi	N-CHANNEL		YES	2.5 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		8 A			1					e6
NTB4302T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	722 mJ	74 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0093 ohm	74 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NVC160N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	119 W	UNSPECIFIED	SWITCHING	1200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	69 A	128 mJ		3	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			.224 ohm	17 A	UNSPECIFIED	R-XUUC-N3				HIGH RELIABILITY					5 pF	AEC-Q101
FSS275	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
MTB55N06ZT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	165 A	454 mJ	55 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.018 ohm	55 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED		e0
NTL4502NT1G	Onsemi	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	24 V	NO LEAD	SQUARE	ENHANCEMENT MODE	4	32 A	80 mJ		16	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.013 ohm	11.4 A	QUAD	S-XQCC-N16		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FQU3N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	150 mJ	2.4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	104 ns		160 ns		3.4 ohm	2.4 A	SINGLE	R-PSIP-T3					TO-251AA				8 pF
NTD14N03RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.13 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB90N02T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MTB1306	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	280 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0085 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
MTD6N10E	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			-55 Cel		Tin/Lead (Sn/Pb)		6 A								e0
MTW6N100E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	720 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.5 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0		235
FCA36N60NF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	312 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104.7 A	1800 mJ	34.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.095 ohm	34.9 A	SINGLE	R-PSFM-T3			Not Qualified			e3
NVBG080N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	179 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	171 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	44 ns	-55 Cel	52 ns	Matte Tin (Sn) - annealed	.11 ohm	30 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263CB	e3	30	245	7.9 pF	AEC-Q101
NVB6411ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	217 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.014 ohm	77 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTD95N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		84 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.005 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTMD6N03R2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.032 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified			e0
ATP216-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel							35 A
NTD110N02R-001G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0062 ohm	12.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
NTMYS011N04CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	173 A	75 mJ	35 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	13 A	SINGLE	R-PSSO-G4	1					e3	30	260
MTB52N06VLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	182 A	406 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.025 ohm	52 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
EFC6612R-TF	Onsemi	N-CHANNEL		YES	2.5 W										23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							23 A
EFC4611-TR	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Silver/Copper (Sn/Ag/Cu)					1					e1
MCH6431-TL-W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH	.055 ohm	5 A	DUAL	R-XDSO-F6	1			ESD PROTECTED		e6	30	260
NTLJS3113PTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	23 A		7.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.05 ohm	3.5 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTLJF4156NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	20 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.09 ohm	2.5 A	DUAL	S-PDSO-C6	1	DRAIN	Not Qualified			e3	30	260
NDD03N40Z-1G	Onsemi																								TIN					3					e3	30	260
MCH5834	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							.7 A
NVD4813NHT4G	Onsemi	N-CHANNEL	SINGLE	YES	35.3 W							1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		40 A			1					e3
NTHD4P02FT1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	9 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	37 ns	-55 Cel	90 ns	TIN LEAD	.155 ohm	2.2 A	DUAL	R-PDSO-F8			Not Qualified			e0		235	50 pF
2SK4100LS	Onsemi	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		6 A
SSU1N60BTU-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	50 mJ	.9 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	140 ns	-55 Cel	140 ns	Matte Tin (Sn) - annealed	12 ohm	.9 A	SINGLE	R-PSIP-T3		DRAIN			TO-251AA	e3			4.7 pF
WPB4002	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	172 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.36 ohm	23 A	SINGLE	R-PSFM-T3					TO-247
NTD6600N-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.146 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NTLGD3502NT1G	Onsemi	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	17.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				Tin (Sn)	.06 ohm	4.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3	40	260
FSS242	Onsemi	N-CHANNEL	SINGLE	YES	1.8 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
NTH4L060N090SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	221 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	211 A	162 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	58 ns	-55 Cel	67 ns	Matte Tin (Sn) - annealed	.084 ohm	46 A	SINGLE	R-PSFM-T4					TO-247	e3			11 pF
MTD6P10ET4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	180 mJ	6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.66 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
2SK543-3	Onsemi	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.