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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTLGD3502NT1G |
| Description | N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Form: NO LEAD; |
| Datasheet | NTLGD3502NT1G Datasheet |
| In Stock | 2,109 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 4.3 A |
| Maximum Pulsed Drain Current (IDM): | 17.2 A |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .06 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
