Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
EFC3J023NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.7 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	R-PBCC-N10		SOURCE					NOT SPECIFIED	NOT SPECIFIED
MTP10N10EL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.22 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NDB7060	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	550 mJ	75 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	430 ns	-65 Cel	280 ns		.013 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				800 pF
FCH22N60N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	205 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	672 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.165 ohm	22 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
NDD04N60ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	120 mJ	4.1 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	2 ohm	2.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
EFC4K110NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.5 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	R-PBCC-N10
2SK4200LS	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
NVATS5A302PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	197 mJ	80 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN BISMUTH	.018 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
NVD3055-094T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.094 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTD65N03RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	71.7 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0146 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NVB6410ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
MCH5837	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel							2 A
NTP75N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0095 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTPF190N65S3HF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	220 mJ	20 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.19 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
MTD15N06VT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	113 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.12 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FW349	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	DEPLETION MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.037 ohm	5 A	DUAL	R-PDSO-G8
NTMKB4895NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	80 mJ		2	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.006 ohm	15 A	BOTTOM	R-XBCC-N2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MTD1N50E1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD4N20ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	80 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.2 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NVBLS0D7N06C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	314 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	800 mJ	470 A	2	SMALL OUTLINE		METAL SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.00075 ohm	470 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260	92 pF	AEC-Q101
MTD6P10EG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	180 mJ	6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.66 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
MTB15N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	113 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.12 ohm	15 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0		235
ATP202-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			50 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		50 A			1					e6	30	260
EFC4618R-P	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	DEPLETION MODE	2				4	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	S-PBGA-B4
MTB75N05HDT4G	Onsemi	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							75 A			1							260
NVMD6N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	1			ULTRA LOW ON RESISTANCE		e3	30	260		AEC-Q101
MTD1N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD14N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	72 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	49 A	98 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.14 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
2SK4094-1E	Onsemi																									Tin (Sn)										e3
NTLJD4116NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	2	20 A		3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.09 ohm	2.5 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
MTD10N10EL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0		235
SVD5803NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	228 A	240 mJ	85 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0057 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NDD04N62ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	620 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2 ohm	4.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NTMKE4890NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	237 A	505 mJ	192 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.00245 ohm	30 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified
NVB5404NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	254 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	670 A	1000 mJ	167 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0045 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTMYS008N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	319 A	267 mJ	59 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.011 ohm	59 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	11 pF
CPH3418	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.4 A
SCH1402	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
NTDV18N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	55 W	175 Cel	SILICON	180 ns	-55 Cel	120 ns	Tin (Sn)	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED	80 pF	AEC-Q101
NTD14N03R-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.13 ohm	11.4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NTQS6466	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.67 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	1360 mJ	6.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.017 ohm	6.8 A	DUAL	R-PDSO-G8			Not Qualified			e0
6LN04MH-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		.2 A			1					e6
NIF9N05ACLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.69 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.125 ohm	2.6 A	DUAL	R-PDSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE	TO-261AA	e3
MCH6422	Onsemi	N-CHANNEL	SINGLE	NO	1.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2 A
MTW10N100E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	500 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.3 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0		235
NTMD3N08LG	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A	25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.215 ohm	2.3 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NTB30N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	101 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.042 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FQB6N40C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	270 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.