Onsemi - FW349

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FW349 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FW349
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet FW349 Datasheet
In Stock2,416
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 20 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 45 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Drain Current (Abs) (ID): 5 A
Maximum Drain-Source On Resistance: .037 ohm
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