Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTP45N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.028 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0		235
NVBGS6D5N15MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	238 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1800 A	180 mJ	121 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.007 ohm	121 A	SINGLE	R-PSSO-G6		DRAIN			TO-263CB		NOT SPECIFIED	NOT SPECIFIED	10.3 pF	AEC-Q101
SCH2808	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							1.4 A
NTD65N03R-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	71.7 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0146 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
3HN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.3 A
ATP203	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							75 A
FDU8782	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	321 A	72 mJ	35 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	32 ns	-55 Cel	61 ns		.014 ohm	35 A	SINGLE	R-PSIP-T3				AVALANCHE RATED	TO-251AA		NOT SPECIFIED	NOT SPECIFIED	240 pF
NTD110N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FCU5N60TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13.8 A	159 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.95 ohm	4.6 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e3
MTE53N50E	Onsemi				460 W							1			53 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin (Sn)		53 A								e3
NTB35N15T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	111 A	700 mJ	37 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	37 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
CPH3413	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2.2 A
FCA16N60N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	134.4 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	355 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.199 ohm	16 A	SINGLE	R-PSFM-T3			Not Qualified			e3
NTMKE4891NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	210 A	184 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0026 ohm	26.7 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FCHD125N65S3R0-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	181 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	115 mJ	24 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.125 ohm	24 A	SINGLE	R-PSFM-T3				AVALANCHE ENERGY RATED	TO-247AD	e3	NOT SPECIFIED	NOT SPECIFIED
NTMD2C02R2SG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.043 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NDF02N60ZH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	24 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	120 mJ	2.4 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.8 ohm	2.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
EC4402C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.1 A
MTP12N06EZL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	72 mJ	36 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.18 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e0
MMSF7P03HDR2G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	5000 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.035 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
MTD2955V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
CPH5805	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							3 A
NTH4L045N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	187 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	197 A	72 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel		Matte Tin (Sn) - annealed	.05 ohm	55 A	SINGLE	R-PSFM-T4					TO-247	e3			14 pF
FW513	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.35 A
NTLGF3501NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	13.8 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.09 ohm	2.8 A	DUAL	S-PDSO-N6			Not Qualified			e3
NDD04N62Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					2 ohm	4.1 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MTP16N25E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	384 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.25 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MTB75N05HDG	Onsemi	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							75 A			1							260
MTB60N05HDL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	540 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.014 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
FCB20N60-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	341 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		480 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.198 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
NTB75N03-06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0065 ohm	75 A	DUAL	R-PDSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3
ATP103-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	50 W							1			55 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		55 A			1					e6	30	260
NTP6N50	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	180 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.7 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FDU5N50NZTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	304 mJ	4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	115 ns	Matte Tin (Sn) - annealed	1.5 ohm	4 A	SINGLE	R-PSIP-T3					TO-251AA	e3			6 pF
MTB10N40ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	520 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.55 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0		235
SFT1445(TP)	Onsemi	N-CHANNEL	SINGLE	NO	35 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							17 A
NTD80N02-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
MCH6337-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		4.5 A			1					e6	30	260
MMDFS6N303R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.035 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
FQP6N80	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	158 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	23.2 A	680 mJ	5.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.95 ohm	5.8 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NTP75N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0095 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
SFT1440(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.5 A
FDMT1D3N08B	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	864 A	1734 mJ	164 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	191 ns	-55 Cel	141 ns	Matte Tin (Sn) - annealed	.00135 ohm	164 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	150 pF
FQP6N90C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	650 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	2.3 ohm	6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FCH47N60F-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	417 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		810 mJ	47 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.075 ohm	47 A	SINGLE	R-PSFM-T3					TO-247					AEC-Q101
FSS250	Onsemi	N-CHANNEL	SINGLE	YES	1.8 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7 A
MMDF3N02HDR2	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	19 A	405 mJ	3.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.09 ohm	3.8 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0	30	235
MTD20P03HDLT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	57 A	200 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.099 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.